19‐6: Invited Paper: A Novel Process for Fabricating High‐Resolution and Very Small Pixel‐pitch GaN LED Microdisplays

19‐6: Invited Paper: A Novel Process for Fabricating High‐Resolution and Very Small Pixel‐pitch GaN LED Microdisplays

A new approach for fabricating very‐small pixel pitch GaN microdisplays is proposed. MicroLEDS obtained from silicon grown epi GaN layers exhibit performances comparable to those obtained on classical sapphire templates. This technology shows very great promises in the fabrication of high brightness...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2017-05, Vol.48 (1), p.268-271
Hauptverfasser: Templier, François, Benaïssa, Lamine, Aventurier, Bernard, Nardo, Christine Di, Charles, Matthew, Daami, Anis, Henry, Franck, Dupré, Ludovic
Format: Artikel
Sprache:eng
Schlagworte:
Augmented reality
Brightness
Displays
Gallium nitrides
GaN
High resolution
Light emitting diodes
MicroLED - Brightness
Sapphire
Silicon
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container_title SID International Symposium Digest of technical papers
container_volume 48
creator Templier, François
Benaïssa, Lamine
Aventurier, Bernard
Nardo, Christine Di
Charles, Matthew
Daami, Anis
Henry, Franck
Dupré, Ludovic
description A new approach for fabricating very‐small pixel pitch GaN microdisplays is proposed. MicroLEDS obtained from silicon grown epi GaN layers exhibit performances comparable to those obtained on classical sapphire templates. This technology shows very great promises in the fabrication of high brightness, ultra‐high‐resolution microdisplays required for augmented reality systems.
doi_str_mv 10.1002/sdtp.11684
format Article
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subjects Augmented reality
Brightness
Displays
Gallium nitrides
GaN
High resolution
Light emitting diodes
MicroLED - Brightness
Sapphire
Silicon
title 19‐6: Invited Paper: A Novel Process for Fabricating High‐Resolution and Very Small Pixel‐pitch GaN LED Microdisplays
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