Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation
Lanthanum oxide-based films were deposited on n-Si and quartz substrates using e-beam evaporation method. The XRD patterns demonstrated mixed structure consisting of La 2 O 3 and La(OH) 3 phases (referred as La 2 O 3 –OH). Optical and electrical properties of La 2 O 3 –OH films, as well as the effec...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2017-06, Vol.123 (6), p.1-6, Article 448 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Igityan, Arsen Aghamalyan, Natella Petrosyan, Silva Gambaryan, Irina Badalyan, Georgi Hovsepyan, Ruben Kafadaryan, Yevgenia |
| description | Lanthanum oxide-based films were deposited on n-Si and quartz substrates using e-beam evaporation method. The XRD patterns demonstrated mixed structure consisting of La
2
O
3
and La(OH)
3
phases (referred as La
2
O
3
–OH). Optical and electrical properties of La
2
O
3
–OH films, as well as the effects of the annealing and storage conditions on these properties are described here. It is observed that conductance–voltage characteristics of Al/La
2
O
3
–OH/n-Si devices along with current rectification show negative differential conductance as a result of water molecule redox reaction on the film surface. |
| doi_str_mv | 10.1007/s00339-017-1057-4 |
| format | Article |
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2
O
3
and La(OH)
3
phases (referred as La
2
O
3
–OH). Optical and electrical properties of La
2
O
3
–OH films, as well as the effects of the annealing and storage conditions on these properties are described here. It is observed that conductance–voltage characteristics of Al/La
2
O
3
–OH/n-Si devices along with current rectification show negative differential conductance as a result of water molecule redox reaction on the film surface.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-017-1057-4</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Aluminum ; Annealing ; Applied physics ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Devices ; Electric potential ; Electrical properties ; Electron beams ; Lanthanum ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Optical properties ; Phases ; Physics ; Physics and Astronomy ; Processes ; Properties (attributes) ; Quartz ; Resistance ; Silicon substrates ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2017-06, Vol.123 (6), p.1-6, Article 448</ispartof><rights>Springer-Verlag Berlin Heidelberg 2017</rights><rights>Copyright Springer Science & Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-92a8d748622441ff5377d544252d57140313156fb0eccbb5d5a31aba5ac39f4d3</citedby><cites>FETCH-LOGICAL-c316t-92a8d748622441ff5377d544252d57140313156fb0eccbb5d5a31aba5ac39f4d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-017-1057-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-017-1057-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Igityan, Arsen</creatorcontrib><creatorcontrib>Aghamalyan, Natella</creatorcontrib><creatorcontrib>Petrosyan, Silva</creatorcontrib><creatorcontrib>Gambaryan, Irina</creatorcontrib><creatorcontrib>Badalyan, Georgi</creatorcontrib><creatorcontrib>Hovsepyan, Ruben</creatorcontrib><creatorcontrib>Kafadaryan, Yevgenia</creatorcontrib><title>Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>Lanthanum oxide-based films were deposited on n-Si and quartz substrates using e-beam evaporation method. The XRD patterns demonstrated mixed structure consisting of La
2
O
3
and La(OH)
3
phases (referred as La
2
O
3
–OH). Optical and electrical properties of La
2
O
3
–OH films, as well as the effects of the annealing and storage conditions on these properties are described here. It is observed that conductance–voltage characteristics of Al/La
2
O
3
–OH/n-Si devices along with current rectification show negative differential conductance as a result of water molecule redox reaction on the film surface.</description><subject>Aluminum</subject><subject>Annealing</subject><subject>Applied physics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Devices</subject><subject>Electric potential</subject><subject>Electrical properties</subject><subject>Electron beams</subject><subject>Lanthanum</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Phases</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Properties (attributes)</subject><subject>Quartz</subject><subject>Resistance</subject><subject>Silicon substrates</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kMtOwzAQRS0EEqXwAewssTaMX3GyRFV5SJXYwNpyYhtSJXGwU0T_HrdhwYbZzIx0753RQeiawi0FUHcJgPOKAFWEglREnKAFFZwRKDicogVUQpGSV8U5ukhpC7kEYwvk151rptg2psNmsDiM03EeYxhdnFqXcPC4M8P0YYZdj8N3ax2pTXIW-7brU1a60cS81nvsjmFhwLUzPXZfZgzRTG0YLtGZN11yV799id4e1q-rJ7J5eXxe3W9Iw2kxkYqZ0ipRFowJQb2XXCkrhWCSWamoAE45lYWvwTVNXUsrDaemNtI0vPLC8iW6mXPz_587lya9Dbs45JOaVsDKkgGvsorOqiaGlKLzeoxtb-JeU9AHnHrGqTNOfcCpRfaw2ZOydnh38U_yv6Yf5jx4jQ</recordid><startdate>20170601</startdate><enddate>20170601</enddate><creator>Igityan, Arsen</creator><creator>Aghamalyan, Natella</creator><creator>Petrosyan, Silva</creator><creator>Gambaryan, Irina</creator><creator>Badalyan, Georgi</creator><creator>Hovsepyan, Ruben</creator><creator>Kafadaryan, Yevgenia</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20170601</creationdate><title>Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation</title><author>Igityan, Arsen ; Aghamalyan, Natella ; Petrosyan, Silva ; Gambaryan, Irina ; Badalyan, Georgi ; Hovsepyan, Ruben ; Kafadaryan, Yevgenia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-92a8d748622441ff5377d544252d57140313156fb0eccbb5d5a31aba5ac39f4d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum</topic><topic>Annealing</topic><topic>Applied physics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Devices</topic><topic>Electric potential</topic><topic>Electrical properties</topic><topic>Electron beams</topic><topic>Lanthanum</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties</topic><topic>Phases</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Properties (attributes)</topic><topic>Quartz</topic><topic>Resistance</topic><topic>Silicon substrates</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Igityan, Arsen</creatorcontrib><creatorcontrib>Aghamalyan, Natella</creatorcontrib><creatorcontrib>Petrosyan, Silva</creatorcontrib><creatorcontrib>Gambaryan, Irina</creatorcontrib><creatorcontrib>Badalyan, Georgi</creatorcontrib><creatorcontrib>Hovsepyan, Ruben</creatorcontrib><creatorcontrib>Kafadaryan, Yevgenia</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Igityan, Arsen</au><au>Aghamalyan, Natella</au><au>Petrosyan, Silva</au><au>Gambaryan, Irina</au><au>Badalyan, Georgi</au><au>Hovsepyan, Ruben</au><au>Kafadaryan, Yevgenia</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2017-06-01</date><risdate>2017</risdate><volume>123</volume><issue>6</issue><spage>1</spage><epage>6</epage><pages>1-6</pages><artnum>448</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Lanthanum oxide-based films were deposited on n-Si and quartz substrates using e-beam evaporation method. The XRD patterns demonstrated mixed structure consisting of La
2
O
3
and La(OH)
3
phases (referred as La
2
O
3
–OH). Optical and electrical properties of La
2
O
3
–OH films, as well as the effects of the annealing and storage conditions on these properties are described here. It is observed that conductance–voltage characteristics of Al/La
2
O
3
–OH/n-Si devices along with current rectification show negative differential conductance as a result of water molecule redox reaction on the film surface.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-017-1057-4</doi><tpages>6</tpages></addata></record> |
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| subjects | Aluminum Annealing Applied physics Characterization and Evaluation of Materials Condensed Matter Physics Devices Electric potential Electrical properties Electron beams Lanthanum Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Optical properties Phases Physics Physics and Astronomy Processes Properties (attributes) Quartz Resistance Silicon substrates Surfaces and Interfaces Thin Films |
| title | Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation |
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