Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation
Lanthanum oxide-based films were deposited on n-Si and quartz substrates using e-beam evaporation method. The XRD patterns demonstrated mixed structure consisting of La 2 O 3 and La(OH) 3 phases (referred as La 2 O 3 –OH). Optical and electrical properties of La 2 O 3 –OH films, as well as the effec...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2017-06, Vol.123 (6), p.1-6, Article 448 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Lanthanum oxide-based films were deposited on n-Si and quartz substrates using e-beam evaporation method. The XRD patterns demonstrated mixed structure consisting of La
2
O
3
and La(OH)
3
phases (referred as La
2
O
3
–OH). Optical and electrical properties of La
2
O
3
–OH films, as well as the effects of the annealing and storage conditions on these properties are described here. It is observed that conductance–voltage characteristics of Al/La
2
O
3
–OH/n-Si devices along with current rectification show negative differential conductance as a result of water molecule redox reaction on the film surface. |
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| ISSN: | 0947-8396 1432-0630 |
| DOI: | 10.1007/s00339-017-1057-4 |