More Efficient Testing of Metal-Oxide Memristor-Based Memory

Resistive memory is a promising emerging technology but is prone to defects due to uncertainties in nanoscale fabrication. The test time of existing techniques for bipolar metal-oxide memristors is dominated by slow writes. Fast March tests are proposed that benefit from fast write operations. The t...

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Veröffentlicht in:	IEEE transactions on computer-aided design of integrated circuits and systems 2017-06, Vol.36 (6), p.1018-1029
Hauptverfasser:	Mozaffari, Seyed Nima, Tragoudas, Spyros, Haniotakis, Themistoklis
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer architecture Conductivity Design for testability (DfT) fault detection March test Memristors Metal oxides metal–oxide memristor nonvolatile memory Resistance Switches Technology assessment Test procedures Testability Testing Transistors
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