Effect of Al：Ag alloy cathode on the performance of transparent organic light-emitting devices
Transparent organic light-emitting devices（TOLEDs） based on a stacked alloy cathode of LiF/Al：Ag are investigated. The devices have a structure of indium-tin-oxide（ITO）/4,4′,4′′-Tris[2-naphthyl（phenyl）amino]triphenylamine（2T-NATA）（25 nm）/N,N＇-Di-[（1-naphthyl）-N,N＇-diphenyl]-1,1＇-biphenyl-4,4＇-diamin...
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| description | Transparent organic light-emitting devices（TOLEDs） based on a stacked alloy cathode of LiF/Al：Ag are investigated. The devices have a structure of indium-tin-oxide（ITO）/4,4′,4′′-Tris[2-naphthyl（phenyl）amino]triphenylamine（2T-NATA）（25 nm）/N,N＇-Di-[（1-naphthyl）-N,N＇-diphenyl]-1,1＇-biphenyl-4,4＇-diamine（NPB）（40 nm）/tris-（8-hydroxyquinoline） aluminum（Al（q3））（50 nm）/LiF（1 nm）/Al：Ag（1：3）（x）, where the thicknesses of cathode metal layers（Al：Ag） are adjusted, respectively, from 70 nm to 100 nm. In the experiment, it is found that the Li F（1 nm）/Al：Ag（1：3）（75 nm） has good electron injection efficiency. Compared with an Al-only cathode, the turn-on voltage is lowered. At the voltage of 10 V, the luminances for bottom emission from ITO anode side and top emission from metal cathode side are 2 459 cd/m~2 and 1 729 cd/m~2, respectively. Thanks to electron injection enhancement by using Al：Ag cathode, we can obtain a better energy level matching between the cathode and the organic layer, thus the devices have lower turn-on voltage and higher luminance. The total transmittance of the devices can achieve about 40% at the wavelength of 550 nm. |
| doi_str_mv | 10.1007/s11801-017-7039-0 |
| format | Article |
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The devices have a structure of indium-tin-oxide（ITO）/4,4′,4′′-Tris[2-naphthyl（phenyl）amino]triphenylamine（2T-NATA）（25 nm）/N,N＇-Di-[（1-naphthyl）-N,N＇-diphenyl]-1,1＇-biphenyl-4,4＇-diamine（NPB）（40 nm）/tris-（8-hydroxyquinoline） aluminum（Al（q3））（50 nm）/LiF（1 nm）/Al：Ag（1：3）（x）, where the thicknesses of cathode metal layers（Al：Ag） are adjusted, respectively, from 70 nm to 100 nm. In the experiment, it is found that the Li F（1 nm）/Al：Ag（1：3）（75 nm） has good electron injection efficiency. Compared with an Al-only cathode, the turn-on voltage is lowered. At the voltage of 10 V, the luminances for bottom emission from ITO anode side and top emission from metal cathode side are 2 459 cd/m~2 and 1 729 cd/m~2, respectively. Thanks to electron injection enhancement by using Al：Ag cathode, we can obtain a better energy level matching between the cathode and the organic layer, thus the devices have lower turn-on voltage and higher luminance. The total transmittance of the devices can achieve about 40% at the wavelength of 550 nm.</description><identifier>ISSN: 1673-1905</identifier><identifier>EISSN: 1993-5013</identifier><identifier>DOI: 10.1007/s11801-017-7039-0</identifier><language>eng</language><publisher>Tianjin: Tianjin University of Technology</publisher><subject>8-羟基喹啉 ; Cathodes ; Devices ; Diamines ; Electric potential ; Energy levels ; Hydroxyquinoline ; Indium tin oxides ; Lasers ; Light emission ; Optical Devices ; Optics ; Organic light emitting diodes ; Photonics ; Physics ; Physics and Astronomy ; Silver base alloys ; Thickness ; Voltage ; 器件性能 ; 开启电压 ; 有机发光器件 ; 有机电致发光 ; 电子注入 ; 铝阴极 ; 银合金</subject><ispartof>Optoelectronics letters, 2017-05, Vol.13 (3), p.175-178</ispartof><rights>Tianjin University of Technology and Springer-Verlag Berlin Heidelberg 2017</rights><rights>Copyright Springer Science & Business Media 2017</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c343t-4c9af4f81e51f736c2fdeb0103ff778d3d240c248b48faff70e2e1791eb3c5f03</citedby><cites>FETCH-LOGICAL-c343t-4c9af4f81e51f736c2fdeb0103ff778d3d240c248b48faff70e2e1791eb3c5f03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/88368X/88368X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11801-017-7039-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11801-017-7039-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>刘晋红 张方辉</creatorcontrib><title>Effect of Al：Ag alloy cathode on the performance of transparent organic light-emitting devices</title><title>Optoelectronics letters</title><addtitle>Optoelectron. Lett</addtitle><addtitle>Opto-electronics Letters</addtitle><description>Transparent organic light-emitting devices（TOLEDs） based on a stacked alloy cathode of LiF/Al：Ag are investigated. The devices have a structure of indium-tin-oxide（ITO）/4,4′,4′′-Tris[2-naphthyl（phenyl）amino]triphenylamine（2T-NATA）（25 nm）/N,N＇-Di-[（1-naphthyl）-N,N＇-diphenyl]-1,1＇-biphenyl-4,4＇-diamine（NPB）（40 nm）/tris-（8-hydroxyquinoline） aluminum（Al（q3））（50 nm）/LiF（1 nm）/Al：Ag（1：3）（x）, where the thicknesses of cathode metal layers（Al：Ag） are adjusted, respectively, from 70 nm to 100 nm. In the experiment, it is found that the Li F（1 nm）/Al：Ag（1：3）（75 nm） has good electron injection efficiency. Compared with an Al-only cathode, the turn-on voltage is lowered. At the voltage of 10 V, the luminances for bottom emission from ITO anode side and top emission from metal cathode side are 2 459 cd/m~2 and 1 729 cd/m~2, respectively. Thanks to electron injection enhancement by using Al：Ag cathode, we can obtain a better energy level matching between the cathode and the organic layer, thus the devices have lower turn-on voltage and higher luminance. The total transmittance of the devices can achieve about 40% at the wavelength of 550 nm.</description><subject>8-羟基喹啉</subject><subject>Cathodes</subject><subject>Devices</subject><subject>Diamines</subject><subject>Electric potential</subject><subject>Energy levels</subject><subject>Hydroxyquinoline</subject><subject>Indium tin oxides</subject><subject>Lasers</subject><subject>Light emission</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Organic light emitting diodes</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silver base alloys</subject><subject>Thickness</subject><subject>Voltage</subject><subject>器件性能</subject><subject>开启电压</subject><subject>有机发光器件</subject><subject>有机电致发光</subject><subject>电子注入</subject><subject>铝阴极</subject><subject>银合金</subject><issn>1673-1905</issn><issn>1993-5013</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEUhQdRsFQfwF3QdTR3Mp1MlkX8g4IbXcc0czMdmSZtEgVfxWfxnXwFU6aIK-8ml3C-c7inKM6AXQJj4ioCNAwoA0EF45Kyg2ICUnI6Y8AP814LTkGy2XFxGuMry8NL0VRyUrzcWIsmEW_JfPj--px3RA-D_yBGp5VvkXhH0grJBoP1Ya2dwZ02Be3iRgd0GQ2ddr0hQ9-tEsV1n1LvOtLie28wnhRHVg8RT_fvtHi-vXm6vqeLx7uH6_mCGl7xRCsjta1sAzgDK3htStvikgHj1grRtLwtK2bKqllWjdX5j2GJICTgkpuZZXxaXIy-m-C3bxiTevVvweVIlS8HUTecy6yCUWWCjzGgVZvQr3X4UMDUrks1dqkyoXZdqp1zOTIxa12H4Y_zP9D5PmjlXbfN3G9SLcpSVgDAfwAsNIOs</recordid><startdate>20170501</startdate><enddate>20170501</enddate><creator>刘晋红 张方辉</creator><general>Tianjin University of Technology</general><general>Springer Nature B.V</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20170501</creationdate><title>Effect of Al：Ag alloy cathode on the performance of transparent organic light-emitting devices</title><author>刘晋红 张方辉</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c343t-4c9af4f81e51f736c2fdeb0103ff778d3d240c248b48faff70e2e1791eb3c5f03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>8-羟基喹啉</topic><topic>Cathodes</topic><topic>Devices</topic><topic>Diamines</topic><topic>Electric potential</topic><topic>Energy levels</topic><topic>Hydroxyquinoline</topic><topic>Indium tin oxides</topic><topic>Lasers</topic><topic>Light emission</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Organic light emitting diodes</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Silver base alloys</topic><topic>Thickness</topic><topic>Voltage</topic><topic>器件性能</topic><topic>开启电压</topic><topic>有机发光器件</topic><topic>有机电致发光</topic><topic>电子注入</topic><topic>铝阴极</topic><topic>银合金</topic><toplevel>online_resources</toplevel><creatorcontrib>刘晋红 张方辉</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><jtitle>Optoelectronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>刘晋红 张方辉</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Al：Ag alloy cathode on the performance of transparent organic light-emitting devices</atitle><jtitle>Optoelectronics letters</jtitle><stitle>Optoelectron. Lett</stitle><addtitle>Opto-electronics Letters</addtitle><date>2017-05-01</date><risdate>2017</risdate><volume>13</volume><issue>3</issue><spage>175</spage><epage>178</epage><pages>175-178</pages><issn>1673-1905</issn><eissn>1993-5013</eissn><abstract>Transparent organic light-emitting devices（TOLEDs） based on a stacked alloy cathode of LiF/Al：Ag are investigated. The devices have a structure of indium-tin-oxide（ITO）/4,4′,4′′-Tris[2-naphthyl（phenyl）amino]triphenylamine（2T-NATA）（25 nm）/N,N＇-Di-[（1-naphthyl）-N,N＇-diphenyl]-1,1＇-biphenyl-4,4＇-diamine（NPB）（40 nm）/tris-（8-hydroxyquinoline） aluminum（Al（q3））（50 nm）/LiF（1 nm）/Al：Ag（1：3）（x）, where the thicknesses of cathode metal layers（Al：Ag） are adjusted, respectively, from 70 nm to 100 nm. In the experiment, it is found that the Li F（1 nm）/Al：Ag（1：3）（75 nm） has good electron injection efficiency. Compared with an Al-only cathode, the turn-on voltage is lowered. At the voltage of 10 V, the luminances for bottom emission from ITO anode side and top emission from metal cathode side are 2 459 cd/m~2 and 1 729 cd/m~2, respectively. Thanks to electron injection enhancement by using Al：Ag cathode, we can obtain a better energy level matching between the cathode and the organic layer, thus the devices have lower turn-on voltage and higher luminance. The total transmittance of the devices can achieve about 40% at the wavelength of 550 nm.</abstract><cop>Tianjin</cop><pub>Tianjin University of Technology</pub><doi>10.1007/s11801-017-7039-0</doi><tpages>4</tpages></addata></record> |
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| subjects | 8-羟基喹啉 Cathodes Devices Diamines Electric potential Energy levels Hydroxyquinoline Indium tin oxides Lasers Light emission Optical Devices Optics Organic light emitting diodes Photonics Physics Physics and Astronomy Silver base alloys Thickness Voltage 器件性能 开启电压 有机发光器件 有机电致发光 电子注入 铝阴极 银合金 |
| title | Effect of Al：Ag alloy cathode on the performance of transparent organic light-emitting devices |
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