Characterization of B-implanted 3C-SiC for intermediate band solar cells
Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×10 17 atoms/cm 2 in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 oC for 60 min. An anomalous area...
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| Veröffentlicht in: | 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) 2017-05, Vol.897, p.1-1 |
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| creator | Quanbao Ma Carvalho, Patricia Galeckas, Augustinas Azarov, Alexander Hovden, Sigurd Thøgersen, Annett Wright, Daniel N. Diplas, Spyros Løvvik, Ole M. Jokubavicius, Valdas Jianwu Sun Syväjärvi, Mikael Svensson, Bengt G. |
| description | Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×10 17 atoms/cm 2 in order to form intermediate band (IB) in 3C-SiC. The samples were then annealed at 1400 oC for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration was the same both within and outside the anomalous area. The buried boron box-like concentration profile can reach ~3×10 21 cm -3 in the plateau region. In the anomalous area a broad emission band (possible IB) emerges at around ~1.7-1.8 eV, which may be associated with B-precipitates having a sufficiently high density. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.897.299 |
| format | Article |
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The samples were then annealed at 1400 oC for 60 min. An anomalous area in the center was observed in the PL emission pattern. The SIMS analysis indicated that the B concentration was the same both within and outside the anomalous area. The buried boron box-like concentration profile can reach ~3×10 21 cm -3 in the plateau region. In the anomalous area a broad emission band (possible IB) emerges at around ~1.7-1.8 eV, which may be associated with B-precipitates having a sufficiently high density.</description><identifier>ISSN: 1662-9752</identifier><identifier>ISSN: 0255-5476</identifier><identifier>EISSN: 1662-9752</identifier><identifier>EISBN: 3035730431</identifier><identifier>EISBN: 9783035730432</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.897.299</identifier><language>eng</language><publisher>Pfaffikon: Trans Tech Publications Ltd</publisher><subject>3C-SiC ; Boron ; characterization ; Crystal growth ; cubic ; Emission analysis ; High temperature ; implantation ; intermediate band ; Pattern analysis ; Photonic band gap ; Photovoltaic cells ; Photovoltaic systems ; photovoltaics ; Physics ; Precipitates ; Silicon carbide ; Solar cells ; Sublimation</subject><ispartof>2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1</ispartof><rights>2017 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. May 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3299-4436af90d270cc73140f615335037c722125d66168f214e4229be999b1105cc53</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/4395?width=600</thumbnail><link.rule.ids>230,309,310,314,776,780,785,786,881,23909,23910,25118,27901,27902</link.rule.ids><backlink>$$Uhttps://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-137579$$DView record from Swedish Publication Index$$Hfree_for_read</backlink></links><search><creatorcontrib>Quanbao Ma</creatorcontrib><creatorcontrib>Carvalho, Patricia</creatorcontrib><creatorcontrib>Galeckas, Augustinas</creatorcontrib><creatorcontrib>Azarov, Alexander</creatorcontrib><creatorcontrib>Hovden, Sigurd</creatorcontrib><creatorcontrib>Thøgersen, Annett</creatorcontrib><creatorcontrib>Wright, Daniel N.</creatorcontrib><creatorcontrib>Diplas, Spyros</creatorcontrib><creatorcontrib>Løvvik, Ole M.</creatorcontrib><creatorcontrib>Jokubavicius, Valdas</creatorcontrib><creatorcontrib>Jianwu Sun</creatorcontrib><creatorcontrib>Syväjärvi, Mikael</creatorcontrib><creatorcontrib>Svensson, Bengt G.</creatorcontrib><title>Characterization of B-implanted 3C-SiC for intermediate band solar cells</title><title>2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)</title><addtitle>ECSCRM</addtitle><description>Sublimation-grown 3C-SiC crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×10 17 atoms/cm 2 in order to form intermediate band (IB) in 3C-SiC. 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crystals were implanted with B ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 1.3×10 17 atoms/cm 2 in order to form intermediate band (IB) in 3C-SiC. 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| ispartof | 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1 |
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| source | Scientific.net Journals |
| subjects | 3C-SiC Boron characterization Crystal growth cubic Emission analysis High temperature implantation intermediate band Pattern analysis Photonic band gap Photovoltaic cells Photovoltaic systems photovoltaics Physics Precipitates Silicon carbide Solar cells Sublimation |
| title | Characterization of B-implanted 3C-SiC for intermediate band solar cells |
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