An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be ch...

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Veröffentlicht in:	International journal of microwave and wireless technologies 2017-06, Vol.9 (5), p.965-976
Hauptverfasser:	Michaelsen, Rasmus S., Johansen, Tom K., Tamborg, Kjeld M., Zhurbenko, Vitaliy, Yan, Lei
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit design Diodes Mixers Research Papers Schottky diodes Silicon germanides Superhigh frequencies Tuning
Online-Zugang:	Volltext
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