An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun
In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be ch...
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| Veröffentlicht in: | International journal of microwave and wireless technologies 2017-06, Vol.9 (5), p.965-976 |
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| container_end_page | 976 |
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| container_issue | 5 |
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| container_title | International journal of microwave and wireless technologies |
| container_volume | 9 |
| creator | Michaelsen, Rasmus S. Johansen, Tom K. Tamborg, Kjeld M. Zhurbenko, Vitaliy Yan, Lei |
| description | In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm. |
| doi_str_mv | 10.1017/S1759078716001069 |
| format | Article |
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The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2 can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. 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The full mixer has a size of 2050 μm × 1000 μm.</description><subject>Circuit design</subject><subject>Diodes</subject><subject>Mixers</subject><subject>Research Papers</subject><subject>Schottky diodes</subject><subject>Silicon germanides</subject><subject>Superhigh frequencies</subject><subject>Tuning</subject><issn>1759-0787</issn><issn>1759-0795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kF9LwzAUxYMoOKcfwLeAz9XcpvnTxzF0Chs-TMG3kqbJmtm1M03RfntbNkQQHy73cDm_c-EgdA3kFgiIuzUIlhIhBXBCgPD0BE3GU0REyk5_tBTn6KJtt4RwIaWYoNWsxm9RruoCr3XZhPDe48I1hcE792U8djVeu4XBweiybqpm0-NPF0oculrllcEr5XU50rmquvoSnVlVtebquKfo9eH-Zf4YLZ8XT_PZMtIU4hAVVBhpY5tYzanRKWU8SZjmEhIgklqrWExi4NxQadSgNCgGhidKKVlITqfo5pC7981HZ9qQbZvO18PLDGQq2TDx6IKDS_umbb2x2d67nfJ9BiQbW8v-tDYw9MioXe5dsTG_ov-lvgF38m0z</recordid><startdate>201706</startdate><enddate>201706</enddate><creator>Michaelsen, Rasmus S.</creator><creator>Johansen, Tom K.</creator><creator>Tamborg, Kjeld M.</creator><creator>Zhurbenko, Vitaliy</creator><creator>Yan, Lei</creator><general>Cambridge University Press</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0002-8970-6186</orcidid></search><sort><creationdate>201706</creationdate><title>An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun</title><author>Michaelsen, Rasmus S. ; Johansen, Tom K. ; Tamborg, Kjeld M. ; Zhurbenko, Vitaliy ; Yan, Lei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c312t-d37e8f2f4fc63ec9356445c68141083ffa5202166e38ea021c1a51e64aaa8d863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Circuit design</topic><topic>Diodes</topic><topic>Mixers</topic><topic>Research Papers</topic><topic>Schottky diodes</topic><topic>Silicon germanides</topic><topic>Superhigh frequencies</topic><topic>Tuning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Michaelsen, Rasmus S.</creatorcontrib><creatorcontrib>Johansen, Tom K.</creatorcontrib><creatorcontrib>Tamborg, Kjeld M.</creatorcontrib><creatorcontrib>Zhurbenko, Vitaliy</creatorcontrib><creatorcontrib>Yan, Lei</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>International journal of microwave and wireless technologies</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Michaelsen, Rasmus S.</au><au>Johansen, Tom K.</au><au>Tamborg, Kjeld M.</au><au>Zhurbenko, Vitaliy</au><au>Yan, Lei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun</atitle><jtitle>International journal of microwave and wireless technologies</jtitle><addtitle>Int. 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| language | eng |
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| source | Cambridge University Press Journals Complete |
| subjects | Circuit design Diodes Mixers Research Papers Schottky diodes Silicon germanides Superhigh frequencies Tuning |
| title | An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun |
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