Light‐Emitting Devices: Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires (Small 19/2017)
Color‐tunable light‐emitting devices are achieved from biased individual Ga‐doped ZnO microwires in article number 1604034, by Chongxin Shan, Dezhen Shen, and Xiaosheng Fang, and co‐workers. It is confirmed that tunable n‐type conduction in Ga‐doped ZnO microwires is dominated by Ga impurities. Thes...
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Veröffentlicht in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2017-05, Vol.13 (19), p.n/a |
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creator | Jiang, Mingming He, Gaohang Chen, Hongyu Zhang, Zhenzhong Zheng, Lingxia Shan, Chongxin Shen, Dezhen Fang, Xiaosheng |
description | Color‐tunable light‐emitting devices are achieved from biased individual Ga‐doped ZnO microwires in article number 1604034, by Chongxin Shan, Dezhen Shen, and Xiaosheng Fang, and co‐workers. It is confirmed that tunable n‐type conduction in Ga‐doped ZnO microwires is dominated by Ga impurities. These multicolor emitters can be used to rival and complement other conventional semiconductor devices in electronic and photoelectronic devices. |
doi_str_mv | 10.1002/smll.201770105 |
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These multicolor emitters can be used to rival and complement other conventional semiconductor devices in electronic and photoelectronic devices.</description><subject>Electroluminescence</subject><subject>Electronic devices</subject><subject>Emitters</subject><subject>Gallium</subject><subject>Ga‐doped ZnO microwires</subject><subject>hot electron</subject><subject>Joule heating</subject><subject>Light sources</subject><subject>light‐emitting devices</subject><subject>Nanotechnology</subject><subject>Semiconductor devices</subject><subject>Zinc oxide</subject><issn>1613-6810</issn><issn>1613-6829</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkDtPAkEUhTdGExFtrSex0WJhHvu0M4BIsoQCjInNZpi9C0Nmd3FmF0Jna-dv9Jc4iMHS6t7knu_ck-M41wR3CMa0awqlOhSTMMQE-ydOiwSEuUFE49PjTvC5c2HMCmNGqBe2nI9ELpb11_vnoJB1LcsF6sNGCjD36IVvQEG5qJf2PGtKPleABgpErSvVFLIEI6Cs0Y8DmlaNthjKdVWgUZnJjcwartCQW7pfrSFDr-UEjaXQ1VZqq7ydFlwpROLuPvTdpXOWc2Xg6ne2nefHwaz35CaT4aj3kLiCYuq7ufAZpRBykguSA2aMC8E5eJDhAM-FF9I5kDjzAh-zwMsoz8MoYlEQRFHIGWVt5-bgu9bVWwOmTlc2emlfpiSKQxawOI6sqnNQ2bjGaMjTtZYF17uU4HRfd7qvOz3WbYH4AGylgt0_6nQ6TpI_9ht4L4eY</recordid><startdate>20170501</startdate><enddate>20170501</enddate><creator>Jiang, Mingming</creator><creator>He, Gaohang</creator><creator>Chen, Hongyu</creator><creator>Zhang, Zhenzhong</creator><creator>Zheng, Lingxia</creator><creator>Shan, Chongxin</creator><creator>Shen, Dezhen</creator><creator>Fang, Xiaosheng</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20170501</creationdate><title>Light‐Emitting Devices: Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires (Small 19/2017)</title><author>Jiang, Mingming ; He, Gaohang ; Chen, Hongyu ; Zhang, Zhenzhong ; Zheng, Lingxia ; Shan, Chongxin ; Shen, Dezhen ; Fang, Xiaosheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2025-fc5322e7a1fc1fe033accaae4ed060bc472be19d4650364d2af7883866887a323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Electroluminescence</topic><topic>Electronic devices</topic><topic>Emitters</topic><topic>Gallium</topic><topic>Ga‐doped ZnO microwires</topic><topic>hot electron</topic><topic>Joule heating</topic><topic>Light sources</topic><topic>light‐emitting devices</topic><topic>Nanotechnology</topic><topic>Semiconductor devices</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jiang, Mingming</creatorcontrib><creatorcontrib>He, Gaohang</creatorcontrib><creatorcontrib>Chen, Hongyu</creatorcontrib><creatorcontrib>Zhang, Zhenzhong</creatorcontrib><creatorcontrib>Zheng, Lingxia</creatorcontrib><creatorcontrib>Shan, Chongxin</creatorcontrib><creatorcontrib>Shen, Dezhen</creatorcontrib><creatorcontrib>Fang, Xiaosheng</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Small (Weinheim an der Bergstrasse, Germany)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jiang, Mingming</au><au>He, Gaohang</au><au>Chen, Hongyu</au><au>Zhang, Zhenzhong</au><au>Zheng, Lingxia</au><au>Shan, Chongxin</au><au>Shen, Dezhen</au><au>Fang, Xiaosheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Light‐Emitting Devices: Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires (Small 19/2017)</atitle><jtitle>Small (Weinheim an der Bergstrasse, Germany)</jtitle><date>2017-05-01</date><risdate>2017</risdate><volume>13</volume><issue>19</issue><epage>n/a</epage><issn>1613-6810</issn><eissn>1613-6829</eissn><abstract>Color‐tunable light‐emitting devices are achieved from biased individual Ga‐doped ZnO microwires in article number 1604034, by Chongxin Shan, Dezhen Shen, and Xiaosheng Fang, and co‐workers. 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subjects | Electroluminescence Electronic devices Emitters Gallium Ga‐doped ZnO microwires hot electron Joule heating Light sources light‐emitting devices Nanotechnology Semiconductor devices Zinc oxide |
title | Light‐Emitting Devices: Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires (Small 19/2017) |
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