Electronic and transport properties of heterophase compounds based on MoS2

New heterophase superlattices based on MoS 2 are studied in detail by the electron density functional theory. It is shown that the incorporation of the 1Т phase in the 2H-MoS 2 monolayer is responsible for the formation of electronic levels near the Fermi level and quantum wells in the transverse direction of superlattices. The proposed lateral heterophase structures of transition metal dichalcogenides are promising for the construction of new elements of nanoelectronics.