Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

The results of studying the effect of thermal and laser annealing on the distribution profiles of phosphorus and boron atoms in Si(111), implanted with different energies and radiation doses, are presented. It is demonstrated that an almost uniform distribution of impurity atoms can be obtained in t...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2017-03, Vol.11 (2), p.474-479
Hauptverfasser:	Rysbaev, A. S., Khujaniyozov, J. B., Bekpulatov, I. R., Rakhimov, A. M., Pardaev, O. R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron Chemistry and Materials Science Ion implantation Laser beam annealing Materials Science Radiation dosage Surfaces and Interfaces Thin Films
Online-Zugang:	Volltext
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