Influence of Oxygen Partial Pressure on Opto-Electrical Properties, Crystallite Size and Dislocation Density of Sn Doped In_2O_3 Nanostructures

In this research, high-quality Sn doped indium oxide (ITO) thin films were grown on glass slide substrates using an electron beam evaporation method. Vacuum chamber partial pressure was changed and the electro-optical as well as the microstructure parameters were investigated. The microstructure of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of electronic materials 2016-10, Vol.45 (10), p.5395
Hauptverfasser:	Soleimanian, Vishtasb, Ghasemi Varnamkhasti, Mohsen
Format:	Artikel
Sprache:	eng
Schlagworte:	Electromagnetism Glass substrates Molecular beam epitaxy Optical properties
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!