Characteristic of Displacement Defects in n-p-n Transistors Caused by Various Heavy Ion Irradiations

Characteristics of displacement defects in n-p-n bipolar junction transistors (BJTs) caused by heavy ions with various nonionizing energy loss (NIEL) values are studied in this paper. The key electrical parameters are measured in situ during irradiation. Behavior of the radiation-induced defects is...

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Veröffentlicht in:	IEEE transactions on nuclear science 2017-03, Vol.64 (3), p.976-982
Hauptverfasser:	Li, Xingji, Yang, Jianqun, Liu, Chaoming, Li, Pengwei, Zhao, Yuling, Liu, Guangqiao
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Bipolar junction transistor (BJT) Current measurement Deep level transient spectroscopy deep level transient spectroscopy (DLTS) analysis Defects Degradation Displacement displacement damage Energy loss Fluence Heavy ions Ions Irradiation Junction transistors Radiation Radiation damage Radiation effects Semiconductor device measurement Semiconductor devices Silicon Spectroscopy Temperature measurement Transistors
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