Effect of deposition time on structural and physical properties of Cu2CdSnS4 thin films prepared by spray pyrolysis technique: experimental and ab initio study

Cu 2 CdSnS 4 (CCdTS) thin films were synthesized using chemical spray pyrolysis deposition technique. The effect of various deposition times (20, 40, 60 min) on growth of these films was investigated. The as-synthesized Cu 2 CdSnS 4 thin films were characterized by X-ray diffraction (XRD), ultraviol...

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Veröffentlicht in:Optical and quantum electronics 2017-04, Vol.49 (4), p.1-12, Article 165
Hauptverfasser: Rouchdi, M., Salmani, E., Hassanain, N., Mzerd, A.
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creator Rouchdi, M.
Salmani, E.
Hassanain, N.
Mzerd, A.
description Cu 2 CdSnS 4 (CCdTS) thin films were synthesized using chemical spray pyrolysis deposition technique. The effect of various deposition times (20, 40, 60 min) on growth of these films was investigated. The as-synthesized Cu 2 CdSnS 4 thin films were characterized by X-ray diffraction (XRD), ultraviolet–visible (UV–Vis) spectroscopy, Raman spectroscopy and Hall Effect measurements. The XRD pattern of Cu 2 CdSnS 4 structured in stannite phase with preferential orientations along (112) planes. Raman spectrum revealed very strong peak at about 333 cm −1 . The films have the direct optical band gaps of 1.39–1.5 eV. The optimum hole mobility was found to be 3.212 × 10 1  cm 2  v −1  s −1 for the film deposited on 60 min. The electronic structure and optical properties of the stannite structure Cu 2 CdSnS 4 were obtained by ab initio calculations using the Korringa–Kohn–Rostoker method combined with the Coherent Potential Approximation (CPA), as well as CPA confirms our results.
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The effect of various deposition times (20, 40, 60 min) on growth of these films was investigated. The as-synthesized Cu 2 CdSnS 4 thin films were characterized by X-ray diffraction (XRD), ultraviolet–visible (UV–Vis) spectroscopy, Raman spectroscopy and Hall Effect measurements. The XRD pattern of Cu 2 CdSnS 4 structured in stannite phase with preferential orientations along (112) planes. Raman spectrum revealed very strong peak at about 333 cm −1 . The films have the direct optical band gaps of 1.39–1.5 eV. The optimum hole mobility was found to be 3.212 × 10 1  cm 2  v −1  s −1 for the film deposited on 60 min. The electronic structure and optical properties of the stannite structure Cu 2 CdSnS 4 were obtained by ab initio calculations using the Korringa–Kohn–Rostoker method combined with the Coherent Potential Approximation (CPA), as well as CPA confirms our results.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-017-1005-8</doi><tpages>12</tpages></addata></record>
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subjects Characterization and Evaluation of Materials
Computer Communication Networks
Electrical Engineering
Energy gap
Hall effect
Lasers
Optical Devices
Optical properties
Optics
Photonics
Physical properties
Physics
Physics and Astronomy
Raman spectroscopy
Spray pyrolysis
Thin films
X-ray diffraction
title Effect of deposition time on structural and physical properties of Cu2CdSnS4 thin films prepared by spray pyrolysis technique: experimental and ab initio study
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