A linear LTE‐advanced CMOS RF power amplifier with integrated phase linearizer

ABSTRACT In this work, a linear CMOS RF power amplifier (RF PA) to support 40‐MHz BW long‐term evolution‐advanced (LTE‐A) application is developed. The AM–PM distortion of the CMOS RF PA is compensated by the proposed wideband phase linearizer, which generates asymmetric triangular current waveform to provide pre‐distorted current to the RF PA. The fabricated PA is tested with 40‐MHz BW LTE‐A signal at 0.837 GHz carrier frequency and showing 30.3% overall system power‐added efficiency (PAE) and −36.1 dBc carrier aggregation (CA) evolved universal terrestrial radio access (E‐UTRA) adjacent channel leakage ratio (ACLR) at 24 dBm output power. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:1119–1122, 2017