A 3D-CMOS compatible silicon photo-sensor with a large vertical photosensitive area

This paper introduces design and simulation of a three-dimensional complementary metal–oxide–semiconductor CMOS compatible photo-sensor based on a silicon substrate. In the structure of photo-sensor, a vertical n+/p junction as a photosensitive area is formed on one side of a U-groove, and perpendic...

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Veröffentlicht in:	Optical and quantum electronics 2017-03, Vol.49 (3), p.1-11, Article 123
Hauptverfasser:	Sabri Alirezaei, Iman, Vierhaus, Jörg, Burte, Edmund P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials CMOS Computer Communication Networks Dark current Electrical Engineering Fiber optics Frequency response Grooves Lasers Optical Devices Optics Photonics Photosensitivity Physics Physics and Astronomy Quantum efficiency Remote monitoring Sensors Silicon substrates Simulation Thickness
Online-Zugang:	Volltext
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