Effect of point defects on luminescence characteristics of ZnO ceramics
Photo- and thermally stimulated luminescence of ZnO ceramics are produced by uniaxial hot pressing. The luminescence spectra of ceramics contain a wide band with a maximum at 500 nm, for which oxygen vacancies V O are responsible, and a narrow band with a maximum at 385 nm, which is of exciton natur...
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creator | Rodnyi, P. A. Chernenko, K. A. Zolotarjovs, A. Grigorjeva, L. Gorokhova, E. I. Venevtsev, I. D. |
description | Photo- and thermally stimulated luminescence of ZnO ceramics are produced by uniaxial hot pressing. The luminescence spectra of ceramics contain a wide band with a maximum at 500 nm, for which oxygen vacancies V
O
are responsible, and a narrow band with a maximum at 385 nm, which is of exciton nature. It follows from luminescence excitation spectra that the exciton energy is transferred to luminescence centers in ZnO. An analysis of the thermally stimulated luminescence curves allowed detection of a set of discrete levels of point defects with activation energies of 25, 45, 510, 590 meV, and defects with continuous energy distributions in the range of 50–100 meV. The parameters of some of the detected defects are characteristic of a lithium impurity and hydrogen centers. The photoluminescence kinetics are studied in a wide temperature range. |
doi_str_mv | 10.1134/S1063783416100309 |
format | Article |
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O
are responsible, and a narrow band with a maximum at 385 nm, which is of exciton nature. It follows from luminescence excitation spectra that the exciton energy is transferred to luminescence centers in ZnO. An analysis of the thermally stimulated luminescence curves allowed detection of a set of discrete levels of point defects with activation energies of 25, 45, 510, 590 meV, and defects with continuous energy distributions in the range of 50–100 meV. The parameters of some of the detected defects are characteristic of a lithium impurity and hydrogen centers. The photoluminescence kinetics are studied in a wide temperature range.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783416100309</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Activation energy ; Analysis ; Ceramics ; Excitation spectra ; Excitons ; Hot pressing ; Impurity Centers ; Lithium ; Luminescence ; Photoluminescence ; Physics ; Physics and Astronomy ; Point defects ; Solid State Physics ; Zinc oxide</subject><ispartof>Physics of the solid state, 2016-10, Vol.58 (10), p.2055-2061</ispartof><rights>Pleiades Publishing, Ltd. 2016</rights><rights>COPYRIGHT 2016 Springer</rights><rights>Copyright Springer Science & Business Media 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c483t-f9b30e6dbf2901e3754cca96a0f4c81abdafe16d6df2d281fff038f3327bda463</citedby><cites>FETCH-LOGICAL-c483t-f9b30e6dbf2901e3754cca96a0f4c81abdafe16d6df2d281fff038f3327bda463</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063783416100309$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063783416100309$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Rodnyi, P. A.</creatorcontrib><creatorcontrib>Chernenko, K. A.</creatorcontrib><creatorcontrib>Zolotarjovs, A.</creatorcontrib><creatorcontrib>Grigorjeva, L.</creatorcontrib><creatorcontrib>Gorokhova, E. I.</creatorcontrib><creatorcontrib>Venevtsev, I. D.</creatorcontrib><title>Effect of point defects on luminescence characteristics of ZnO ceramics</title><title>Physics of the solid state</title><addtitle>Phys. Solid State</addtitle><description>Photo- and thermally stimulated luminescence of ZnO ceramics are produced by uniaxial hot pressing. The luminescence spectra of ceramics contain a wide band with a maximum at 500 nm, for which oxygen vacancies V
O
are responsible, and a narrow band with a maximum at 385 nm, which is of exciton nature. It follows from luminescence excitation spectra that the exciton energy is transferred to luminescence centers in ZnO. An analysis of the thermally stimulated luminescence curves allowed detection of a set of discrete levels of point defects with activation energies of 25, 45, 510, 590 meV, and defects with continuous energy distributions in the range of 50–100 meV. The parameters of some of the detected defects are characteristic of a lithium impurity and hydrogen centers. The photoluminescence kinetics are studied in a wide temperature range.</description><subject>Activation energy</subject><subject>Analysis</subject><subject>Ceramics</subject><subject>Excitation spectra</subject><subject>Excitons</subject><subject>Hot pressing</subject><subject>Impurity Centers</subject><subject>Lithium</subject><subject>Luminescence</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Point defects</subject><subject>Solid State Physics</subject><subject>Zinc oxide</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kUtLxDAQgIso-PwB3gqePFRnmjRtjyKrLiws-Lh4Cdl0sla26ZqkoP_elBV0Uckhmcz3TTJMkpwiXCAyfvmAIFhZMY4CARjUO8kBQg2Z4AJ2x7Ng2ZjfTw69fwVAxKI-SG4nxpAOaW_Sdd_akDY0xj7tbboautaS12Q1pfpFOaUDudaHVvtReLbzVJNTXYyPkz2jVp5Ovvaj5Olm8nh9l83mt9Prq1mmecVCZuoFAxLNwuQ1ILGy4FqrWigwXFeoFo0yhKIRjcmbvEJjDLDKMJaXMcUFO0rONnXXrn8byAf52g_OxiclVhVUBdZQflNLtSLZWtOH-Pmu9Vpe8boocyw5RuriDyquhmJLvSXTxvst4XxLiEyg97BUg_dy-nC_zeKG1a733pGRa9d2yn1IBDmOTP4aWXTyjeMja5fkfjT3r_QJVimVmg</recordid><startdate>20161001</startdate><enddate>20161001</enddate><creator>Rodnyi, P. A.</creator><creator>Chernenko, K. A.</creator><creator>Zolotarjovs, A.</creator><creator>Grigorjeva, L.</creator><creator>Gorokhova, E. I.</creator><creator>Venevtsev, I. D.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope></search><sort><creationdate>20161001</creationdate><title>Effect of point defects on luminescence characteristics of ZnO ceramics</title><author>Rodnyi, P. A. ; Chernenko, K. A. ; Zolotarjovs, A. ; Grigorjeva, L. ; Gorokhova, E. I. ; Venevtsev, I. D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c483t-f9b30e6dbf2901e3754cca96a0f4c81abdafe16d6df2d281fff038f3327bda463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Activation energy</topic><topic>Analysis</topic><topic>Ceramics</topic><topic>Excitation spectra</topic><topic>Excitons</topic><topic>Hot pressing</topic><topic>Impurity Centers</topic><topic>Lithium</topic><topic>Luminescence</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Point defects</topic><topic>Solid State Physics</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rodnyi, P. A.</creatorcontrib><creatorcontrib>Chernenko, K. A.</creatorcontrib><creatorcontrib>Zolotarjovs, A.</creatorcontrib><creatorcontrib>Grigorjeva, L.</creatorcontrib><creatorcontrib>Gorokhova, E. I.</creatorcontrib><creatorcontrib>Venevtsev, I. D.</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rodnyi, P. A.</au><au>Chernenko, K. A.</au><au>Zolotarjovs, A.</au><au>Grigorjeva, L.</au><au>Gorokhova, E. I.</au><au>Venevtsev, I. D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of point defects on luminescence characteristics of ZnO ceramics</atitle><jtitle>Physics of the solid state</jtitle><stitle>Phys. Solid State</stitle><date>2016-10-01</date><risdate>2016</risdate><volume>58</volume><issue>10</issue><spage>2055</spage><epage>2061</epage><pages>2055-2061</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>Photo- and thermally stimulated luminescence of ZnO ceramics are produced by uniaxial hot pressing. The luminescence spectra of ceramics contain a wide band with a maximum at 500 nm, for which oxygen vacancies V
O
are responsible, and a narrow band with a maximum at 385 nm, which is of exciton nature. It follows from luminescence excitation spectra that the exciton energy is transferred to luminescence centers in ZnO. An analysis of the thermally stimulated luminescence curves allowed detection of a set of discrete levels of point defects with activation energies of 25, 45, 510, 590 meV, and defects with continuous energy distributions in the range of 50–100 meV. The parameters of some of the detected defects are characteristic of a lithium impurity and hydrogen centers. The photoluminescence kinetics are studied in a wide temperature range.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063783416100309</doi><tpages>7</tpages></addata></record> |
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subjects | Activation energy Analysis Ceramics Excitation spectra Excitons Hot pressing Impurity Centers Lithium Luminescence Photoluminescence Physics Physics and Astronomy Point defects Solid State Physics Zinc oxide |
title | Effect of point defects on luminescence characteristics of ZnO ceramics |
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