Stopping cross sections of protons in Ti, TiO2 and Si using medium energy ion scattering
Stopping cross sections of protons in Ti, Si, and TiO 2 films in the energy range 50–170 keV were determined from medium energy ion scattering (MEIS) spectra by an iterative procedure. The energy loss of protons was investigated for pure Ti and Si films, deposited by molecular beam epitaxy (MBE) ont...
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| Veröffentlicht in: | The European physical journal. D, Atomic, molecular, and optical physics Atomic, molecular, and optical physics, 2016-11, Vol.70 (11), p.1-7, Article 248 |
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| creator | Brocklebank, Mitchell Dedyulin, Sergey N. Goncharova, Lyudmila V. |
| description | Stopping cross sections of protons in Ti, Si, and TiO
2
films in the energy range 50–170 keV were determined from medium energy ion scattering (MEIS) spectra by an iterative procedure. The energy loss of protons was investigated for pure Ti and Si films, deposited by molecular beam epitaxy (MBE) onto
n
-Si(100) and diamond-like carbon (DLC) substrates respectively. Consecutive annealing of Ti at 200 °C in O
2
resulted in stoichiometric TiO
2
thin-films. Thickness and composition of the films and the interfacial properties were determined using Rutherford backscattering spectroscopy (RBS), MEIS, and X-ray photoelectron spectroscopy (XPS). Calculated stopping cross sections of Ti, Si, and TiO
2
in the range of energies were compared with the commonly used SRIM2003 values. For Ti and Si, SRIM2003 values appear to be overestimated over the entire energy range. The new stopping cross sections explain deviations from previously reported values for SrTiO
3
. We note that the stopping cross sections of O in a gaseous phase, used in Bragg’s rule calculations, cannot be applied for accurate quantitative ion beam analysis in solid compounds in the medium ion energy range.
Graphical abstract |
| doi_str_mv | 10.1140/epjd/e2016-70277-3 |
| format | Article |
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2
films in the energy range 50–170 keV were determined from medium energy ion scattering (MEIS) spectra by an iterative procedure. The energy loss of protons was investigated for pure Ti and Si films, deposited by molecular beam epitaxy (MBE) onto
n
-Si(100) and diamond-like carbon (DLC) substrates respectively. Consecutive annealing of Ti at 200 °C in O
2
resulted in stoichiometric TiO
2
thin-films. Thickness and composition of the films and the interfacial properties were determined using Rutherford backscattering spectroscopy (RBS), MEIS, and X-ray photoelectron spectroscopy (XPS). Calculated stopping cross sections of Ti, Si, and TiO
2
in the range of energies were compared with the commonly used SRIM2003 values. For Ti and Si, SRIM2003 values appear to be overestimated over the entire energy range. The new stopping cross sections explain deviations from previously reported values for SrTiO
3
. We note that the stopping cross sections of O in a gaseous phase, used in Bragg’s rule calculations, cannot be applied for accurate quantitative ion beam analysis in solid compounds in the medium ion energy range.
Graphical abstract</description><identifier>ISSN: 1434-6060</identifier><identifier>EISSN: 1434-6079</identifier><identifier>DOI: 10.1140/epjd/e2016-70277-3</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Analytical techniques ; Applications of Nonlinear Dynamics and Chaos Theory ; Atomic ; Backscattering ; Cross-sections ; Diamond-like carbon films ; Energy ; Energy dissipation ; Interfacial properties ; Ion beams ; Ion scattering ; Mathematical analysis ; Molecular ; Molecular beam epitaxy ; Optical and Plasma Physics ; Photoelectrons ; Physical Chemistry ; Physics ; Physics and Astronomy ; Protons ; Quantum Information Technology ; Quantum Physics ; Regular Article ; Rutherford backscattering spectroscopy ; Silicon films ; Spectroscopy/Spectrometry ; Spectrum analysis ; Spintronics ; Strontium titanates ; Thickness ; Thin films ; Titanium dioxide ; X ray photoelectron spectroscopy</subject><ispartof>The European physical journal. D, Atomic, molecular, and optical physics, 2016-11, Vol.70 (11), p.1-7, Article 248</ispartof><rights>EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2016</rights><rights>Copyright Springer Science & Business Media 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-7a46644d2bf3d4128ee321cc42440cd6852ffc6fe71f8c10c1785cfa063b341f3</citedby><cites>FETCH-LOGICAL-c319t-7a46644d2bf3d4128ee321cc42440cd6852ffc6fe71f8c10c1785cfa063b341f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1140/epjd/e2016-70277-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1140/epjd/e2016-70277-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Brocklebank, Mitchell</creatorcontrib><creatorcontrib>Dedyulin, Sergey N.</creatorcontrib><creatorcontrib>Goncharova, Lyudmila V.</creatorcontrib><title>Stopping cross sections of protons in Ti, TiO2 and Si using medium energy ion scattering</title><title>The European physical journal. D, Atomic, molecular, and optical physics</title><addtitle>Eur. Phys. J. D</addtitle><description>Stopping cross sections of protons in Ti, Si, and TiO
2
films in the energy range 50–170 keV were determined from medium energy ion scattering (MEIS) spectra by an iterative procedure. The energy loss of protons was investigated for pure Ti and Si films, deposited by molecular beam epitaxy (MBE) onto
n
-Si(100) and diamond-like carbon (DLC) substrates respectively. Consecutive annealing of Ti at 200 °C in O
2
resulted in stoichiometric TiO
2
thin-films. Thickness and composition of the films and the interfacial properties were determined using Rutherford backscattering spectroscopy (RBS), MEIS, and X-ray photoelectron spectroscopy (XPS). Calculated stopping cross sections of Ti, Si, and TiO
2
in the range of energies were compared with the commonly used SRIM2003 values. For Ti and Si, SRIM2003 values appear to be overestimated over the entire energy range. The new stopping cross sections explain deviations from previously reported values for SrTiO
3
. We note that the stopping cross sections of O in a gaseous phase, used in Bragg’s rule calculations, cannot be applied for accurate quantitative ion beam analysis in solid compounds in the medium ion energy range.
Graphical abstract</description><subject>Analytical techniques</subject><subject>Applications of Nonlinear Dynamics and Chaos Theory</subject><subject>Atomic</subject><subject>Backscattering</subject><subject>Cross-sections</subject><subject>Diamond-like carbon films</subject><subject>Energy</subject><subject>Energy dissipation</subject><subject>Interfacial properties</subject><subject>Ion beams</subject><subject>Ion scattering</subject><subject>Mathematical analysis</subject><subject>Molecular</subject><subject>Molecular beam epitaxy</subject><subject>Optical and Plasma Physics</subject><subject>Photoelectrons</subject><subject>Physical Chemistry</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Protons</subject><subject>Quantum Information Technology</subject><subject>Quantum Physics</subject><subject>Regular Article</subject><subject>Rutherford backscattering spectroscopy</subject><subject>Silicon films</subject><subject>Spectroscopy/Spectrometry</subject><subject>Spectrum analysis</subject><subject>Spintronics</subject><subject>Strontium titanates</subject><subject>Thickness</subject><subject>Thin films</subject><subject>Titanium dioxide</subject><subject>X ray photoelectron spectroscopy</subject><issn>1434-6060</issn><issn>1434-6079</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKt_wFPAq2snH022Ryl-QaGHVvAWttlJSbG7a5I99N-bbUW8eBhmYOaZmfcl5JbBA2MSJtjt6glyYKrQwLUuxBkZMSlkoUDPzn9rBZfkKsYdAPCpVCPysUpt1_lmS21oY6QRbfJtE2nraBfaNJS-oWt_n2PJadXUdOVpHwdkj7Xv9xQbDNsDzRiNtkoJQ25ekwtXfUa8-clj8v78tJ6_Fovly9v8cVFYwWap0JVUSsqab5yoJeMlouDMWsmlBFurcsqds8qhZq60DCzT5dS6CpTYCMmcGJO709787VePMZld24cmnzSsLKHkM1A6T_HT1FFlQGe64PdVOBgGZnDQDA6ao4Pm6KARGRInKHaDIgx_Vv9PfQPa2XVw</recordid><startdate>20161101</startdate><enddate>20161101</enddate><creator>Brocklebank, Mitchell</creator><creator>Dedyulin, Sergey N.</creator><creator>Goncharova, Lyudmila V.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20161101</creationdate><title>Stopping cross sections of protons in Ti, TiO2 and Si using medium energy ion scattering</title><author>Brocklebank, Mitchell ; Dedyulin, Sergey N. ; Goncharova, Lyudmila V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-7a46644d2bf3d4128ee321cc42440cd6852ffc6fe71f8c10c1785cfa063b341f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Analytical techniques</topic><topic>Applications of Nonlinear Dynamics and Chaos Theory</topic><topic>Atomic</topic><topic>Backscattering</topic><topic>Cross-sections</topic><topic>Diamond-like carbon films</topic><topic>Energy</topic><topic>Energy dissipation</topic><topic>Interfacial properties</topic><topic>Ion beams</topic><topic>Ion scattering</topic><topic>Mathematical analysis</topic><topic>Molecular</topic><topic>Molecular beam epitaxy</topic><topic>Optical and Plasma Physics</topic><topic>Photoelectrons</topic><topic>Physical Chemistry</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Protons</topic><topic>Quantum Information Technology</topic><topic>Quantum Physics</topic><topic>Regular Article</topic><topic>Rutherford backscattering spectroscopy</topic><topic>Silicon films</topic><topic>Spectroscopy/Spectrometry</topic><topic>Spectrum analysis</topic><topic>Spintronics</topic><topic>Strontium titanates</topic><topic>Thickness</topic><topic>Thin films</topic><topic>Titanium dioxide</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Brocklebank, Mitchell</creatorcontrib><creatorcontrib>Dedyulin, Sergey N.</creatorcontrib><creatorcontrib>Goncharova, Lyudmila V.</creatorcontrib><collection>CrossRef</collection><jtitle>The European physical journal. D, Atomic, molecular, and optical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Brocklebank, Mitchell</au><au>Dedyulin, Sergey N.</au><au>Goncharova, Lyudmila V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stopping cross sections of protons in Ti, TiO2 and Si using medium energy ion scattering</atitle><jtitle>The European physical journal. D, Atomic, molecular, and optical physics</jtitle><stitle>Eur. Phys. J. D</stitle><date>2016-11-01</date><risdate>2016</risdate><volume>70</volume><issue>11</issue><spage>1</spage><epage>7</epage><pages>1-7</pages><artnum>248</artnum><issn>1434-6060</issn><eissn>1434-6079</eissn><abstract>Stopping cross sections of protons in Ti, Si, and TiO
2
films in the energy range 50–170 keV were determined from medium energy ion scattering (MEIS) spectra by an iterative procedure. The energy loss of protons was investigated for pure Ti and Si films, deposited by molecular beam epitaxy (MBE) onto
n
-Si(100) and diamond-like carbon (DLC) substrates respectively. Consecutive annealing of Ti at 200 °C in O
2
resulted in stoichiometric TiO
2
thin-films. Thickness and composition of the films and the interfacial properties were determined using Rutherford backscattering spectroscopy (RBS), MEIS, and X-ray photoelectron spectroscopy (XPS). Calculated stopping cross sections of Ti, Si, and TiO
2
in the range of energies were compared with the commonly used SRIM2003 values. For Ti and Si, SRIM2003 values appear to be overestimated over the entire energy range. The new stopping cross sections explain deviations from previously reported values for SrTiO
3
. We note that the stopping cross sections of O in a gaseous phase, used in Bragg’s rule calculations, cannot be applied for accurate quantitative ion beam analysis in solid compounds in the medium ion energy range.
Graphical abstract</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1140/epjd/e2016-70277-3</doi><tpages>7</tpages></addata></record> |
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| subjects | Analytical techniques Applications of Nonlinear Dynamics and Chaos Theory Atomic Backscattering Cross-sections Diamond-like carbon films Energy Energy dissipation Interfacial properties Ion beams Ion scattering Mathematical analysis Molecular Molecular beam epitaxy Optical and Plasma Physics Photoelectrons Physical Chemistry Physics Physics and Astronomy Protons Quantum Information Technology Quantum Physics Regular Article Rutherford backscattering spectroscopy Silicon films Spectroscopy/Spectrometry Spectrum analysis Spintronics Strontium titanates Thickness Thin films Titanium dioxide X ray photoelectron spectroscopy |
| title | Stopping cross sections of protons in Ti, TiO2 and Si using medium energy ion scattering |
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