Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 10 13 –1.7 × 10 15 cm –2 and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have be...
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creator | Sobolev, N. A. Kalyadin, A. E. Aruev, P. N. Zabrodskii, V. V. Shek, E. I. Shtel’makh, K. F. Karabeshkin, K. V. |
description | The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 10
13
–1.7 × 10
15
cm
–2
and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 μm, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically. |
doi_str_mv | 10.1134/S1063783416120283 |
format | Article |
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13
–1.7 × 10
15
cm
–2
and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 μm, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783416120283</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Analysis ; Annealing ; Chlorine ; Defect annealing ; Impurity Centers ; Ion implantation ; Line spectra ; Luminescence ; Optical properties ; Oxygen ions ; Photoluminescence ; Physics ; Physics and Astronomy ; Silicon ; Solid State Physics ; Time measurement</subject><ispartof>Physics of the solid state, 2016-12, Vol.58 (12), p.2499-2502</ispartof><rights>Pleiades Publishing, Ltd. 2016</rights><rights>COPYRIGHT 2016 Springer</rights><rights>Copyright Springer Science & Business Media 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-614facc8391cbf60665c87eb33be0861be03d62276af1470c49f656910c72a123</citedby><cites>FETCH-LOGICAL-c355t-614facc8391cbf60665c87eb33be0861be03d62276af1470c49f656910c72a123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063783416120283$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063783416120283$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Sobolev, N. A.</creatorcontrib><creatorcontrib>Kalyadin, A. E.</creatorcontrib><creatorcontrib>Aruev, P. N.</creatorcontrib><creatorcontrib>Zabrodskii, V. V.</creatorcontrib><creatorcontrib>Shek, E. I.</creatorcontrib><creatorcontrib>Shtel’makh, K. F.</creatorcontrib><creatorcontrib>Karabeshkin, K. V.</creatorcontrib><title>Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions</title><title>Physics of the solid state</title><addtitle>Phys. Solid State</addtitle><description>The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 10
13
–1.7 × 10
15
cm
–2
and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 μm, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.</description><subject>Analysis</subject><subject>Annealing</subject><subject>Chlorine</subject><subject>Defect annealing</subject><subject>Impurity Centers</subject><subject>Ion implantation</subject><subject>Line spectra</subject><subject>Luminescence</subject><subject>Optical properties</subject><subject>Oxygen ions</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silicon</subject><subject>Solid State Physics</subject><subject>Time measurement</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kU1LAzEQhhdR8PMHeAt40cPWzGY3mz2WUj-g4EE9L2l2UlN2k5qkYP-Av9ss7UEQCcmEmfd5M2Gy7BroBICV969AOasFK4FDQQvBjrIzoA3Necnp8XjnLB_rp9l5CGtKAaBqzrLvudaoInGaxA8kZtj00kYZjbOkcwGJtF3aFmVv7IpEMyBJpVHbbwdjMSi0CsnGuw36aDCMVreppzvS4WgdiLEkmN6oxB38sSPLHXFfuxWmnLPhMjvRsg94dYgX2fvD_G32lC9eHp9n00WuWFXFnEOppVKCNaCWmlPOKyVqXDK2RCo4pJN1vChqLjWUNVVlo3nFG6CqLiQU7CK72fumfj-3GGK7dltv05MtCEEFVKwYVZO9aiV7bI3VLnqp0upwGL-B2qT8tGwqwaASZQJgDyjvQvCo2403g_S7Fmg7zqf9M5_EFHsmJK1dof_Vyr_QD6clkVg</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>Sobolev, N. A.</creator><creator>Kalyadin, A. E.</creator><creator>Aruev, P. N.</creator><creator>Zabrodskii, V. V.</creator><creator>Shek, E. I.</creator><creator>Shtel’makh, K. F.</creator><creator>Karabeshkin, K. V.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20161201</creationdate><title>Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions</title><author>Sobolev, N. A. ; Kalyadin, A. E. ; Aruev, P. N. ; Zabrodskii, V. V. ; Shek, E. I. ; Shtel’makh, K. F. ; Karabeshkin, K. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-614facc8391cbf60665c87eb33be0861be03d62276af1470c49f656910c72a123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Analysis</topic><topic>Annealing</topic><topic>Chlorine</topic><topic>Defect annealing</topic><topic>Impurity Centers</topic><topic>Ion implantation</topic><topic>Line spectra</topic><topic>Luminescence</topic><topic>Optical properties</topic><topic>Oxygen ions</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Silicon</topic><topic>Solid State Physics</topic><topic>Time measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sobolev, N. A.</creatorcontrib><creatorcontrib>Kalyadin, A. E.</creatorcontrib><creatorcontrib>Aruev, P. N.</creatorcontrib><creatorcontrib>Zabrodskii, V. V.</creatorcontrib><creatorcontrib>Shek, E. I.</creatorcontrib><creatorcontrib>Shtel’makh, K. F.</creatorcontrib><creatorcontrib>Karabeshkin, K. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sobolev, N. A.</au><au>Kalyadin, A. E.</au><au>Aruev, P. N.</au><au>Zabrodskii, V. V.</au><au>Shek, E. I.</au><au>Shtel’makh, K. F.</au><au>Karabeshkin, K. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions</atitle><jtitle>Physics of the solid state</jtitle><stitle>Phys. Solid State</stitle><date>2016-12-01</date><risdate>2016</risdate><volume>58</volume><issue>12</issue><spage>2499</spage><epage>2502</epage><pages>2499-2502</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 10
13
–1.7 × 10
15
cm
–2
and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 μm, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063783416120283</doi><tpages>4</tpages></addata></record> |
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subjects | Analysis Annealing Chlorine Defect annealing Impurity Centers Ion implantation Line spectra Luminescence Optical properties Oxygen ions Photoluminescence Physics Physics and Astronomy Silicon Solid State Physics Time measurement |
title | Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions |
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