Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions

The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 10 13 –1.7 × 10 15 cm –2 and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have be...

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Veröffentlicht in:Physics of the solid state 2016-12, Vol.58 (12), p.2499-2502
Hauptverfasser: Sobolev, N. A., Kalyadin, A. E., Aruev, P. N., Zabrodskii, V. V., Shek, E. I., Shtel’makh, K. F., Karabeshkin, K. V.
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container_end_page 2502
container_issue 12
container_start_page 2499
container_title Physics of the solid state
container_volume 58
creator Sobolev, N. A.
Kalyadin, A. E.
Aruev, P. N.
Zabrodskii, V. V.
Shek, E. I.
Shtel’makh, K. F.
Karabeshkin, K. V.
description The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 10 13 –1.7 × 10 15 cm –2 and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 μm, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.
doi_str_mv 10.1134/S1063783416120283
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fullrecord <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_1880815322</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A495831584</galeid><sourcerecordid>A495831584</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-614facc8391cbf60665c87eb33be0861be03d62276af1470c49f656910c72a123</originalsourceid><addsrcrecordid>eNp1kU1LAzEQhhdR8PMHeAt40cPWzGY3mz2WUj-g4EE9L2l2UlN2k5qkYP-Av9ss7UEQCcmEmfd5M2Gy7BroBICV969AOasFK4FDQQvBjrIzoA3Necnp8XjnLB_rp9l5CGtKAaBqzrLvudaoInGaxA8kZtj00kYZjbOkcwGJtF3aFmVv7IpEMyBJpVHbbwdjMSi0CsnGuw36aDCMVreppzvS4WgdiLEkmN6oxB38sSPLHXFfuxWmnLPhMjvRsg94dYgX2fvD_G32lC9eHp9n00WuWFXFnEOppVKCNaCWmlPOKyVqXDK2RCo4pJN1vChqLjWUNVVlo3nFG6CqLiQU7CK72fumfj-3GGK7dltv05MtCEEFVKwYVZO9aiV7bI3VLnqp0upwGL-B2qT8tGwqwaASZQJgDyjvQvCo2403g_S7Fmg7zqf9M5_EFHsmJK1dof_Vyr_QD6clkVg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880815322</pqid></control><display><type>article</type><title>Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions</title><source>SpringerLink Journals</source><creator>Sobolev, N. A. ; Kalyadin, A. E. ; Aruev, P. N. ; Zabrodskii, V. V. ; Shek, E. I. ; Shtel’makh, K. F. ; Karabeshkin, K. V.</creator><creatorcontrib>Sobolev, N. A. ; Kalyadin, A. E. ; Aruev, P. N. ; Zabrodskii, V. V. ; Shek, E. I. ; Shtel’makh, K. F. ; Karabeshkin, K. V.</creatorcontrib><description>The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 10 13 –1.7 × 10 15 cm –2 and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 μm, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.</description><identifier>ISSN: 1063-7834</identifier><identifier>EISSN: 1090-6460</identifier><identifier>DOI: 10.1134/S1063783416120283</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Analysis ; Annealing ; Chlorine ; Defect annealing ; Impurity Centers ; Ion implantation ; Line spectra ; Luminescence ; Optical properties ; Oxygen ions ; Photoluminescence ; Physics ; Physics and Astronomy ; Silicon ; Solid State Physics ; Time measurement</subject><ispartof>Physics of the solid state, 2016-12, Vol.58 (12), p.2499-2502</ispartof><rights>Pleiades Publishing, Ltd. 2016</rights><rights>COPYRIGHT 2016 Springer</rights><rights>Copyright Springer Science &amp; Business Media 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-614facc8391cbf60665c87eb33be0861be03d62276af1470c49f656910c72a123</citedby><cites>FETCH-LOGICAL-c355t-614facc8391cbf60665c87eb33be0861be03d62276af1470c49f656910c72a123</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063783416120283$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063783416120283$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Sobolev, N. A.</creatorcontrib><creatorcontrib>Kalyadin, A. E.</creatorcontrib><creatorcontrib>Aruev, P. N.</creatorcontrib><creatorcontrib>Zabrodskii, V. V.</creatorcontrib><creatorcontrib>Shek, E. I.</creatorcontrib><creatorcontrib>Shtel’makh, K. F.</creatorcontrib><creatorcontrib>Karabeshkin, K. V.</creatorcontrib><title>Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions</title><title>Physics of the solid state</title><addtitle>Phys. Solid State</addtitle><description>The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 10 13 –1.7 × 10 15 cm –2 and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 μm, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.</description><subject>Analysis</subject><subject>Annealing</subject><subject>Chlorine</subject><subject>Defect annealing</subject><subject>Impurity Centers</subject><subject>Ion implantation</subject><subject>Line spectra</subject><subject>Luminescence</subject><subject>Optical properties</subject><subject>Oxygen ions</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silicon</subject><subject>Solid State Physics</subject><subject>Time measurement</subject><issn>1063-7834</issn><issn>1090-6460</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kU1LAzEQhhdR8PMHeAt40cPWzGY3mz2WUj-g4EE9L2l2UlN2k5qkYP-Av9ss7UEQCcmEmfd5M2Gy7BroBICV969AOasFK4FDQQvBjrIzoA3Necnp8XjnLB_rp9l5CGtKAaBqzrLvudaoInGaxA8kZtj00kYZjbOkcwGJtF3aFmVv7IpEMyBJpVHbbwdjMSi0CsnGuw36aDCMVreppzvS4WgdiLEkmN6oxB38sSPLHXFfuxWmnLPhMjvRsg94dYgX2fvD_G32lC9eHp9n00WuWFXFnEOppVKCNaCWmlPOKyVqXDK2RCo4pJN1vChqLjWUNVVlo3nFG6CqLiQU7CK72fumfj-3GGK7dltv05MtCEEFVKwYVZO9aiV7bI3VLnqp0upwGL-B2qT8tGwqwaASZQJgDyjvQvCo2403g_S7Fmg7zqf9M5_EFHsmJK1dof_Vyr_QD6clkVg</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>Sobolev, N. A.</creator><creator>Kalyadin, A. E.</creator><creator>Aruev, P. N.</creator><creator>Zabrodskii, V. V.</creator><creator>Shek, E. I.</creator><creator>Shtel’makh, K. F.</creator><creator>Karabeshkin, K. V.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20161201</creationdate><title>Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions</title><author>Sobolev, N. A. ; Kalyadin, A. E. ; Aruev, P. N. ; Zabrodskii, V. V. ; Shek, E. I. ; Shtel’makh, K. F. ; Karabeshkin, K. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-614facc8391cbf60665c87eb33be0861be03d62276af1470c49f656910c72a123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Analysis</topic><topic>Annealing</topic><topic>Chlorine</topic><topic>Defect annealing</topic><topic>Impurity Centers</topic><topic>Ion implantation</topic><topic>Line spectra</topic><topic>Luminescence</topic><topic>Optical properties</topic><topic>Oxygen ions</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Silicon</topic><topic>Solid State Physics</topic><topic>Time measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sobolev, N. A.</creatorcontrib><creatorcontrib>Kalyadin, A. E.</creatorcontrib><creatorcontrib>Aruev, P. N.</creatorcontrib><creatorcontrib>Zabrodskii, V. V.</creatorcontrib><creatorcontrib>Shek, E. I.</creatorcontrib><creatorcontrib>Shtel’makh, K. F.</creatorcontrib><creatorcontrib>Karabeshkin, K. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Physics of the solid state</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sobolev, N. A.</au><au>Kalyadin, A. E.</au><au>Aruev, P. N.</au><au>Zabrodskii, V. V.</au><au>Shek, E. I.</au><au>Shtel’makh, K. F.</au><au>Karabeshkin, K. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions</atitle><jtitle>Physics of the solid state</jtitle><stitle>Phys. Solid State</stitle><date>2016-12-01</date><risdate>2016</risdate><volume>58</volume><issue>12</issue><spage>2499</spage><epage>2502</epage><pages>2499-2502</pages><issn>1063-7834</issn><eissn>1090-6460</eissn><abstract>The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of 1.7 × 10 13 –1.7 × 10 15 cm –2 and the subsequent annealing at a temperature of 700°C for 0.5–2.0 h in a chlorine-containing atmosphere have been investigated. Regardless of the implantation dose and annealing time, the photoluminescence spectra are dominated by the line at a wavelength of 1.37 μm, which is attributed to a (113) defect. The dependences of the line intensity on the implantation dose and annealing time are characterized by curves with maxima. As the measurement temperature increases in the range from 64 to 120 K, the line intensity decreases monotonically.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063783416120283</doi><tpages>4</tpages></addata></record>
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subjects Analysis
Annealing
Chlorine
Defect annealing
Impurity Centers
Ion implantation
Line spectra
Luminescence
Optical properties
Oxygen ions
Photoluminescence
Physics
Physics and Astronomy
Silicon
Solid State Physics
Time measurement
title Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T07%3A00%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20the%20implantation%20dose%20and%20annealing%20time%20on%20the%20luminescence%20properties%20of%20(113)%20defects%20in%20silicon%20implanted%20by%20oxygen%20ions&rft.jtitle=Physics%20of%20the%20solid%20state&rft.au=Sobolev,%20N.%20A.&rft.date=2016-12-01&rft.volume=58&rft.issue=12&rft.spage=2499&rft.epage=2502&rft.pages=2499-2502&rft.issn=1063-7834&rft.eissn=1090-6460&rft_id=info:doi/10.1134/S1063783416120283&rft_dat=%3Cgale_proqu%3EA495831584%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1880815322&rft_id=info:pmid/&rft_galeid=A495831584&rfr_iscdi=true