Photoreflectance of indium antimonide

The photoreflectance spectra of n -InSb layers were measured using photomodulation Fourier transform infrared spectroscopy. The samples were grown by molecular beam epitaxy on heavily doped n + -InSb(001) substrates annealed under different conditions. The strength of the near-surface electric field...

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Veröffentlicht in:	Physics of the solid state 2016-12, Vol.58 (12), p.2394-2400
Hauptverfasser:	Komkov, O. S., Firsov, D. D., Lvova, T. V., Sedova, I. V., Semenov, A. N., Solov’ev, V. A., Ivanov, S. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aqueous solutions Conduction bands Electric field strength Electric fields Epitaxial growth Epitaxy Fermi surfaces Fourier transforms Indium Indium antimonide Infrared spectra Infrared spectroscopy Intermetallic compounds Molecular beam epitaxy Optics Physics Physics and Astronomy Semiconductors Sodium sulfide Solid State Physics Spectrum analysis Substrates
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