Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs
The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2016-12, Vol.50 (12), p.1641-1646 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 50 |
| creator | Gudina, S V Arapov, Yu G Saveliev, A P Neverov, V N Podgornykh, S M Shelushinina, N G Yakunin, M V I. S. Vasil’evskii Vinichenko, A N |
| description | The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of hopping conductivity in a strongly localized electron system. The analysis of variable-range hopping conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent. |
| doi_str_mv | 10.1134/S1063782616120071 |
| format | Article |
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| subjects | Electromagnetism Electrons Heterostructures Hopping conduction Indium aluminum arsenides Indium gallium arsenides Quantum Hall effect |
| title | Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs |
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