On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions

The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The deviation of the thermopower of ErxSn1–xSe samples in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-02, Vol.51 (2), p.153-157
Hauptverfasser: Huseynov, J. I., Murguzov, M. I., Ismayilov, Sh. S., Mamedova, R. F., Gojayev, E. M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 157
container_issue 2
container_start_page 153
container_title Semiconductors (Woodbury, N.Y.)
container_volume 51
creator Huseynov, J. I.
Murguzov, M. I.
Ismayilov, Sh. S.
Mamedova, R. F.
Gojayev, E. M.
description The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The deviation of the thermopower of ErxSn1–xSe samples in the nonequilibrium state from linearity is found to be caused mainly by the entrainment of charge carriers by phonons αph. The statistical forces of electronic entrainment, Aph(ε), are estimated.
doi_str_mv 10.1134/S1063782617020075
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1880779604</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1880779604</sourcerecordid><originalsourceid>FETCH-LOGICAL-c704-ee084c47f0f392fb03e0f4cb1ca0ae988ad4f8d3fc61ff4934924919dee6081a3</originalsourceid><addsrcrecordid>eNplUEFOwzAQtBBIlMIDuFniHNiN3dg-oqpQpEo9tPfIddaQqo2DnQq48Qd-yEtI1N447M6sdrQ7GsZuEe4RhXxYIRRC6bxABTmAmpyxEYKBrJDKnA-8ENmwv2RXKW0BEPVEjthq2fDujYaK-9CGD4rcNtVp3tvXhrra8TaGlmJXU-LB81nkn3zV4O_3T4_EU9jV1dAPXR2adM0uvN0lujnhmK2fZuvpPFssn1-mj4vMKZAZEWjppPLghcn9BgSBl26DzoIlo7WtpNeV8K5A76UR0uTSoKmICtBoxZjdHc_25t4PlLpyGw6x6T-WqDUoZQqQvQqPKhdDSpF82cZ6b-NXiVAO0ZX_ohN_1E5h6A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880779604</pqid></control><display><type>article</type><title>On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions</title><source>SpringerLink Journals - AutoHoldings</source><creator>Huseynov, J. I. ; Murguzov, M. I. ; Ismayilov, Sh. S. ; Mamedova, R. F. ; Gojayev, E. M.</creator><creatorcontrib>Huseynov, J. I. ; Murguzov, M. I. ; Ismayilov, Sh. S. ; Mamedova, R. F. ; Gojayev, E. M.</creatorcontrib><description>The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The deviation of the thermopower of ErxSn1–xSe samples in the nonequilibrium state from linearity is found to be caused mainly by the entrainment of charge carriers by phonons αph. The statistical forces of electronic entrainment, Aph(ε), are estimated.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782617020075</identifier><language>eng</language><publisher>New York: Springer Nature B.V</publisher><subject>Current carriers ; Deviation ; Entrainment ; Linearity ; Room temperature ; Solid solutions ; Statistical methods ; Temperature dependence ; Thermoelectricity</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.153-157</ispartof><rights>Copyright Springer Science &amp; Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c704-ee084c47f0f392fb03e0f4cb1ca0ae988ad4f8d3fc61ff4934924919dee6081a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Huseynov, J. I.</creatorcontrib><creatorcontrib>Murguzov, M. I.</creatorcontrib><creatorcontrib>Ismayilov, Sh. S.</creatorcontrib><creatorcontrib>Mamedova, R. F.</creatorcontrib><creatorcontrib>Gojayev, E. M.</creatorcontrib><title>On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions</title><title>Semiconductors (Woodbury, N.Y.)</title><description>The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The deviation of the thermopower of ErxSn1–xSe samples in the nonequilibrium state from linearity is found to be caused mainly by the entrainment of charge carriers by phonons αph. The statistical forces of electronic entrainment, Aph(ε), are estimated.</description><subject>Current carriers</subject><subject>Deviation</subject><subject>Entrainment</subject><subject>Linearity</subject><subject>Room temperature</subject><subject>Solid solutions</subject><subject>Statistical methods</subject><subject>Temperature dependence</subject><subject>Thermoelectricity</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNplUEFOwzAQtBBIlMIDuFniHNiN3dg-oqpQpEo9tPfIddaQqo2DnQq48Qd-yEtI1N447M6sdrQ7GsZuEe4RhXxYIRRC6bxABTmAmpyxEYKBrJDKnA-8ENmwv2RXKW0BEPVEjthq2fDujYaK-9CGD4rcNtVp3tvXhrra8TaGlmJXU-LB81nkn3zV4O_3T4_EU9jV1dAPXR2adM0uvN0lujnhmK2fZuvpPFssn1-mj4vMKZAZEWjppPLghcn9BgSBl26DzoIlo7WtpNeV8K5A76UR0uTSoKmICtBoxZjdHc_25t4PlLpyGw6x6T-WqDUoZQqQvQqPKhdDSpF82cZ6b-NXiVAO0ZX_ohN_1E5h6A</recordid><startdate>201702</startdate><enddate>201702</enddate><creator>Huseynov, J. I.</creator><creator>Murguzov, M. I.</creator><creator>Ismayilov, Sh. S.</creator><creator>Mamedova, R. F.</creator><creator>Gojayev, E. M.</creator><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201702</creationdate><title>On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions</title><author>Huseynov, J. I. ; Murguzov, M. I. ; Ismayilov, Sh. S. ; Mamedova, R. F. ; Gojayev, E. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c704-ee084c47f0f392fb03e0f4cb1ca0ae988ad4f8d3fc61ff4934924919dee6081a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Current carriers</topic><topic>Deviation</topic><topic>Entrainment</topic><topic>Linearity</topic><topic>Room temperature</topic><topic>Solid solutions</topic><topic>Statistical methods</topic><topic>Temperature dependence</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huseynov, J. I.</creatorcontrib><creatorcontrib>Murguzov, M. I.</creatorcontrib><creatorcontrib>Ismayilov, Sh. S.</creatorcontrib><creatorcontrib>Mamedova, R. F.</creatorcontrib><creatorcontrib>Gojayev, E. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huseynov, J. I.</au><au>Murguzov, M. I.</au><au>Ismayilov, Sh. S.</au><au>Mamedova, R. F.</au><au>Gojayev, E. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2017-02</date><risdate>2017</risdate><volume>51</volume><issue>2</issue><spage>153</spage><epage>157</epage><pages>153-157</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The deviation of the thermopower of ErxSn1–xSe samples in the nonequilibrium state from linearity is found to be caused mainly by the entrainment of charge carriers by phonons αph. The statistical forces of electronic entrainment, Aph(ε), are estimated.</abstract><cop>New York</cop><pub>Springer Nature B.V</pub><doi>10.1134/S1063782617020075</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1063-7826
ispartof Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.153-157
issn 1063-7826
1090-6479
language eng
recordid cdi_proquest_journals_1880779604
source SpringerLink Journals - AutoHoldings
subjects Current carriers
Deviation
Entrainment
Linearity
Room temperature
Solid solutions
Statistical methods
Temperature dependence
Thermoelectricity
title On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T10%3A49%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20thermopower%20and%20thermomagnetic%20properties%20of%20Er%20x%20Sn1%E2%80%93x%20Se%20solid%20solutions&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Huseynov,%20J.%20I.&rft.date=2017-02&rft.volume=51&rft.issue=2&rft.spage=153&rft.epage=157&rft.pages=153-157&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782617020075&rft_dat=%3Cproquest_cross%3E1880779604%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1880779604&rft_id=info:pmid/&rfr_iscdi=true