On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions
The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The deviation of the thermopower of ErxSn1–xSe samples in...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2017-02, Vol.51 (2), p.153-157 |
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creator | Huseynov, J. I. Murguzov, M. I. Ismayilov, Sh. S. Mamedova, R. F. Gojayev, E. M. |
description | The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The deviation of the thermopower of ErxSn1–xSe samples in the nonequilibrium state from linearity is found to be caused mainly by the entrainment of charge carriers by phonons αph. The statistical forces of electronic entrainment, Aph(ε), are estimated. |
doi_str_mv | 10.1134/S1063782617020075 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1880779604</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1880779604</sourcerecordid><originalsourceid>FETCH-LOGICAL-c704-ee084c47f0f392fb03e0f4cb1ca0ae988ad4f8d3fc61ff4934924919dee6081a3</originalsourceid><addsrcrecordid>eNplUEFOwzAQtBBIlMIDuFniHNiN3dg-oqpQpEo9tPfIddaQqo2DnQq48Qd-yEtI1N447M6sdrQ7GsZuEe4RhXxYIRRC6bxABTmAmpyxEYKBrJDKnA-8ENmwv2RXKW0BEPVEjthq2fDujYaK-9CGD4rcNtVp3tvXhrra8TaGlmJXU-LB81nkn3zV4O_3T4_EU9jV1dAPXR2adM0uvN0lujnhmK2fZuvpPFssn1-mj4vMKZAZEWjppPLghcn9BgSBl26DzoIlo7WtpNeV8K5A76UR0uTSoKmICtBoxZjdHc_25t4PlLpyGw6x6T-WqDUoZQqQvQqPKhdDSpF82cZ6b-NXiVAO0ZX_ohN_1E5h6A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880779604</pqid></control><display><type>article</type><title>On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions</title><source>SpringerLink Journals - AutoHoldings</source><creator>Huseynov, J. I. ; Murguzov, M. I. ; Ismayilov, Sh. S. ; Mamedova, R. F. ; Gojayev, E. M.</creator><creatorcontrib>Huseynov, J. I. ; Murguzov, M. I. ; Ismayilov, Sh. S. ; Mamedova, R. F. ; Gojayev, E. M.</creatorcontrib><description>The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The deviation of the thermopower of ErxSn1–xSe samples in the nonequilibrium state from linearity is found to be caused mainly by the entrainment of charge carriers by phonons αph. The statistical forces of electronic entrainment, Aph(ε), are estimated.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782617020075</identifier><language>eng</language><publisher>New York: Springer Nature B.V</publisher><subject>Current carriers ; Deviation ; Entrainment ; Linearity ; Room temperature ; Solid solutions ; Statistical methods ; Temperature dependence ; Thermoelectricity</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.153-157</ispartof><rights>Copyright Springer Science & Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c704-ee084c47f0f392fb03e0f4cb1ca0ae988ad4f8d3fc61ff4934924919dee6081a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Huseynov, J. I.</creatorcontrib><creatorcontrib>Murguzov, M. I.</creatorcontrib><creatorcontrib>Ismayilov, Sh. S.</creatorcontrib><creatorcontrib>Mamedova, R. F.</creatorcontrib><creatorcontrib>Gojayev, E. M.</creatorcontrib><title>On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions</title><title>Semiconductors (Woodbury, N.Y.)</title><description>The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The deviation of the thermopower of ErxSn1–xSe samples in the nonequilibrium state from linearity is found to be caused mainly by the entrainment of charge carriers by phonons αph. The statistical forces of electronic entrainment, Aph(ε), are estimated.</description><subject>Current carriers</subject><subject>Deviation</subject><subject>Entrainment</subject><subject>Linearity</subject><subject>Room temperature</subject><subject>Solid solutions</subject><subject>Statistical methods</subject><subject>Temperature dependence</subject><subject>Thermoelectricity</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNplUEFOwzAQtBBIlMIDuFniHNiN3dg-oqpQpEo9tPfIddaQqo2DnQq48Qd-yEtI1N447M6sdrQ7GsZuEe4RhXxYIRRC6bxABTmAmpyxEYKBrJDKnA-8ENmwv2RXKW0BEPVEjthq2fDujYaK-9CGD4rcNtVp3tvXhrra8TaGlmJXU-LB81nkn3zV4O_3T4_EU9jV1dAPXR2adM0uvN0lujnhmK2fZuvpPFssn1-mj4vMKZAZEWjppPLghcn9BgSBl26DzoIlo7WtpNeV8K5A76UR0uTSoKmICtBoxZjdHc_25t4PlLpyGw6x6T-WqDUoZQqQvQqPKhdDSpF82cZ6b-NXiVAO0ZX_ohN_1E5h6A</recordid><startdate>201702</startdate><enddate>201702</enddate><creator>Huseynov, J. I.</creator><creator>Murguzov, M. I.</creator><creator>Ismayilov, Sh. S.</creator><creator>Mamedova, R. F.</creator><creator>Gojayev, E. M.</creator><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201702</creationdate><title>On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions</title><author>Huseynov, J. I. ; Murguzov, M. I. ; Ismayilov, Sh. S. ; Mamedova, R. F. ; Gojayev, E. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c704-ee084c47f0f392fb03e0f4cb1ca0ae988ad4f8d3fc61ff4934924919dee6081a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Current carriers</topic><topic>Deviation</topic><topic>Entrainment</topic><topic>Linearity</topic><topic>Room temperature</topic><topic>Solid solutions</topic><topic>Statistical methods</topic><topic>Temperature dependence</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huseynov, J. I.</creatorcontrib><creatorcontrib>Murguzov, M. I.</creatorcontrib><creatorcontrib>Ismayilov, Sh. S.</creatorcontrib><creatorcontrib>Mamedova, R. F.</creatorcontrib><creatorcontrib>Gojayev, E. M.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huseynov, J. I.</au><au>Murguzov, M. I.</au><au>Ismayilov, Sh. S.</au><au>Mamedova, R. F.</au><au>Gojayev, E. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2017-02</date><risdate>2017</risdate><volume>51</volume><issue>2</issue><spage>153</spage><epage>157</epage><pages>153-157</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The ErxSn1–xSe system is characterized by a significant deviation of the temperature dependence of the differential thermopower from linearity at temperatures below room temperature and a change in the sign of the thermomagnetic coefficient. The deviation of the thermopower of ErxSn1–xSe samples in the nonequilibrium state from linearity is found to be caused mainly by the entrainment of charge carriers by phonons αph. The statistical forces of electronic entrainment, Aph(ε), are estimated.</abstract><cop>New York</cop><pub>Springer Nature B.V</pub><doi>10.1134/S1063782617020075</doi><tpages>5</tpages></addata></record> |
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subjects | Current carriers Deviation Entrainment Linearity Room temperature Solid solutions Statistical methods Temperature dependence Thermoelectricity |
title | On the thermopower and thermomagnetic properties of Er x Sn1–x Se solid solutions |
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