The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates

The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates

The structure of GaP films grown by molecular-beam epitaxy on vicinal Si(1113) substrates has been studied by X-ray diffraction. It is established that the crystalline lattice of a pseudomorphic film rotates about the axis toward increasing deviation from the singular orientation, while the subseque...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Technical physics letters 2017-02, Vol.43 (2), p.213-215
Hauptverfasser: Loshkarev, I. D., Vasilenko, A. P., Trukhanov, E. M., Kolesnikov, A. V., Putyato, M. A., Esin, M. Yu, Petrushkov, M. O.
Format: Artikel
Sprache:eng
Schlagworte:
Classical and Continuum Physics
Epitaxial growth
Molecular beam epitaxy
Molecular structure
Physics
Physics and Astronomy
Silicon substrates
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 215
container_issue 2
container_start_page 213
container_title Technical physics letters
container_volume 43
creator Loshkarev, I. D.
Vasilenko, A. P.
Trukhanov, E. M.
Kolesnikov, A. V.
Putyato, M. A.
Esin, M. Yu
Petrushkov, M. O.
description The structure of GaP films grown by molecular-beam epitaxy on vicinal Si(1113) substrates has been studied by X-ray diffraction. It is established that the crystalline lattice of a pseudomorphic film rotates about the axis toward increasing deviation from the singular orientation, while the subsequent relaxation leads to rotation in the opposite direction. This is valid for the films of both (001) and (001̄) polarities. Differences between the surface morphologies of relaxed and pseudomorphic GaP films are revealed.
doi_str_mv 10.1134/S1063785017020225
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1880744113</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1880744113</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-8ea351d45a32f85e789363ea5f8fead26c0ea7cc8f90aa9df460e3e9325a3a013</originalsourceid><addsrcrecordid>eNp1UMtKxDAUDaLg-PgAdwE3uqjeJE2bLmXQURhQmHFdYnszZuw0NUlR_94M40IQV_dwXhcOIWcMrhgT-fWCQSFKJYGVwIFzuUcmDCrICinE_hYXItvqh-QohDUAKC6rCXlbviIN0Y9NHL3uEtQRqTMUBxv1p03UTD9RY7tN2NKtNQY99pEOrtPeRouBrrz76Knr6cYG521SsaULewHALmkYX1J_ag0n5MDoLuDpzz0mz3e3y-l9Nn-cPUxv5lkjWBEzhVpI1uZSC26UxFJVohCopVEGdcuLBlCXTaNMBVpXrckLQIGV4CmhgYljcr7rHbx7HzHEeu1G36eXNVMKyjxPkyUX27ka70LwaOrB2432XzWDertp_WfTlOG7TEjefoX-V_O_oW8ivnkH</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880744113</pqid></control><display><type>article</type><title>The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates</title><source>SpringerNature Journals</source><creator>Loshkarev, I. D. ; Vasilenko, A. P. ; Trukhanov, E. M. ; Kolesnikov, A. V. ; Putyato, M. A. ; Esin, M. Yu ; Petrushkov, M. O.</creator><creatorcontrib>Loshkarev, I. D. ; Vasilenko, A. P. ; Trukhanov, E. M. ; Kolesnikov, A. V. ; Putyato, M. A. ; Esin, M. Yu ; Petrushkov, M. O.</creatorcontrib><description>The structure of GaP films grown by molecular-beam epitaxy on vicinal Si(1113) substrates has been studied by X-ray diffraction. It is established that the crystalline lattice of a pseudomorphic film rotates about the axis toward increasing deviation from the singular orientation, while the subsequent relaxation leads to rotation in the opposite direction. This is valid for the films of both (001) and (001̄) polarities. Differences between the surface morphologies of relaxed and pseudomorphic GaP films are revealed.</description><identifier>ISSN: 1063-7850</identifier><identifier>EISSN: 1090-6533</identifier><identifier>DOI: 10.1134/S1063785017020225</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Classical and Continuum Physics ; Epitaxial growth ; Molecular beam epitaxy ; Molecular structure ; Physics ; Physics and Astronomy ; Silicon substrates</subject><ispartof>Technical physics letters, 2017-02, Vol.43 (2), p.213-215</ispartof><rights>Pleiades Publishing, Ltd. 2017</rights><rights>Copyright Springer Science &amp; Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-8ea351d45a32f85e789363ea5f8fead26c0ea7cc8f90aa9df460e3e9325a3a013</citedby><cites>FETCH-LOGICAL-c316t-8ea351d45a32f85e789363ea5f8fead26c0ea7cc8f90aa9df460e3e9325a3a013</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063785017020225$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063785017020225$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,782,786,27933,27934,41497,42566,51328</link.rule.ids></links><search><creatorcontrib>Loshkarev, I. D.</creatorcontrib><creatorcontrib>Vasilenko, A. P.</creatorcontrib><creatorcontrib>Trukhanov, E. M.</creatorcontrib><creatorcontrib>Kolesnikov, A. V.</creatorcontrib><creatorcontrib>Putyato, M. A.</creatorcontrib><creatorcontrib>Esin, M. Yu</creatorcontrib><creatorcontrib>Petrushkov, M. O.</creatorcontrib><title>The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates</title><title>Technical physics letters</title><addtitle>Tech. Phys. Lett</addtitle><description>The structure of GaP films grown by molecular-beam epitaxy on vicinal Si(1113) substrates has been studied by X-ray diffraction. It is established that the crystalline lattice of a pseudomorphic film rotates about the axis toward increasing deviation from the singular orientation, while the subsequent relaxation leads to rotation in the opposite direction. This is valid for the films of both (001) and (001̄) polarities. Differences between the surface morphologies of relaxed and pseudomorphic GaP films are revealed.</description><subject>Classical and Continuum Physics</subject><subject>Epitaxial growth</subject><subject>Molecular beam epitaxy</subject><subject>Molecular structure</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silicon substrates</subject><issn>1063-7850</issn><issn>1090-6533</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1UMtKxDAUDaLg-PgAdwE3uqjeJE2bLmXQURhQmHFdYnszZuw0NUlR_94M40IQV_dwXhcOIWcMrhgT-fWCQSFKJYGVwIFzuUcmDCrICinE_hYXItvqh-QohDUAKC6rCXlbviIN0Y9NHL3uEtQRqTMUBxv1p03UTD9RY7tN2NKtNQY99pEOrtPeRouBrrz76Knr6cYG521SsaULewHALmkYX1J_ag0n5MDoLuDpzz0mz3e3y-l9Nn-cPUxv5lkjWBEzhVpI1uZSC26UxFJVohCopVEGdcuLBlCXTaNMBVpXrckLQIGV4CmhgYljcr7rHbx7HzHEeu1G36eXNVMKyjxPkyUX27ka70LwaOrB2432XzWDertp_WfTlOG7TEjefoX-V_O_oW8ivnkH</recordid><startdate>20170201</startdate><enddate>20170201</enddate><creator>Loshkarev, I. D.</creator><creator>Vasilenko, A. P.</creator><creator>Trukhanov, E. M.</creator><creator>Kolesnikov, A. V.</creator><creator>Putyato, M. A.</creator><creator>Esin, M. Yu</creator><creator>Petrushkov, M. O.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20170201</creationdate><title>The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates</title><author>Loshkarev, I. D. ; Vasilenko, A. P. ; Trukhanov, E. M. ; Kolesnikov, A. V. ; Putyato, M. A. ; Esin, M. Yu ; Petrushkov, M. O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-8ea351d45a32f85e789363ea5f8fead26c0ea7cc8f90aa9df460e3e9325a3a013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Classical and Continuum Physics</topic><topic>Epitaxial growth</topic><topic>Molecular beam epitaxy</topic><topic>Molecular structure</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Loshkarev, I. D.</creatorcontrib><creatorcontrib>Vasilenko, A. P.</creatorcontrib><creatorcontrib>Trukhanov, E. M.</creatorcontrib><creatorcontrib>Kolesnikov, A. V.</creatorcontrib><creatorcontrib>Putyato, M. A.</creatorcontrib><creatorcontrib>Esin, M. Yu</creatorcontrib><creatorcontrib>Petrushkov, M. O.</creatorcontrib><collection>CrossRef</collection><jtitle>Technical physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Loshkarev, I. D.</au><au>Vasilenko, A. P.</au><au>Trukhanov, E. M.</au><au>Kolesnikov, A. V.</au><au>Putyato, M. A.</au><au>Esin, M. Yu</au><au>Petrushkov, M. O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates</atitle><jtitle>Technical physics letters</jtitle><stitle>Tech. Phys. Lett</stitle><date>2017-02-01</date><risdate>2017</risdate><volume>43</volume><issue>2</issue><spage>213</spage><epage>215</epage><pages>213-215</pages><issn>1063-7850</issn><eissn>1090-6533</eissn><abstract>The structure of GaP films grown by molecular-beam epitaxy on vicinal Si(1113) substrates has been studied by X-ray diffraction. It is established that the crystalline lattice of a pseudomorphic film rotates about the axis toward increasing deviation from the singular orientation, while the subsequent relaxation leads to rotation in the opposite direction. This is valid for the films of both (001) and (001̄) polarities. Differences between the surface morphologies of relaxed and pseudomorphic GaP films are revealed.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063785017020225</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1063-7850
ispartof Technical physics letters, 2017-02, Vol.43 (2), p.213-215
issn 1063-7850
1090-6533
language eng
recordid cdi_proquest_journals_1880744113
source SpringerNature Journals
subjects Classical and Continuum Physics
Epitaxial growth
Molecular beam epitaxy
Molecular structure
Physics
Physics and Astronomy
Silicon substrates
title The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-11-30T07%3A42%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20structural%20state%20of%20epitaxial%20GaP%20films%20of%20different%20polarities%20grown%20on%20misoriented%20Si(001)%20substrates&rft.jtitle=Technical%20physics%20letters&rft.au=Loshkarev,%20I.%20D.&rft.date=2017-02-01&rft.volume=43&rft.issue=2&rft.spage=213&rft.epage=215&rft.pages=213-215&rft.issn=1063-7850&rft.eissn=1090-6533&rft_id=info:doi/10.1134/S1063785017020225&rft_dat=%3Cproquest_cross%3E1880744113%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1880744113&rft_id=info:pmid/&rfr_iscdi=true