A 1-MHz hard-switched silicon carbide DC–DC converter

Silicon Carbide (SiC) is a wide bandgap semiconductor material that offers performance improvements over Si for power semiconductors with accompanying benefits for power electronics applications that use these semiconductors. The wide bandgap of SiC results in higher junction forward voltage drops,...

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Veröffentlicht in:	IEEE transactions on power electronics 2006-07, Vol.21 (4), p.880-889
Hauptverfasser:	Abou-Alfotouh, Ahmed M., Radun, Arthur V., Chang, Hsueh-Rong, Winterhalter, Craig
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Band gap Circuits Converters Current density DC–DC converter Devices Drift Electric currents Electric fields Electric power generation Electric vehicles Electrical engineering. Electrical power engineering Electronics Exact sciences and technology Field effect transistors Junctions Majority carriers Performance evaluation power electronics Power electronics, power supplies Power semiconductor devices power semiconductors Resistance Schottky diodes Semiconductor materials Semiconductors Silicon Silicon carbide silicon carbide (SiC) switched Voltage converters (DC to DC) Voltage drop Wide bandgap semiconductors
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