Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

Total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET tra...

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Veröffentlicht in:	IEEE transactions on nuclear science 2017-01, Vol.64 (1), p.285-292
Hauptverfasser:	King, M. P., Wu, X., Eller, M., Samavedam, S., Shaneyfelt, M. R., Silva, A. I., Draper, B. L., Rice, W. C., Meisenheimer, T. L., Felix, J. A., Zhang, E. X., Haeffner, T. D., Ball, D. R., Shetler, K. J., Alles, M. L., Kauppila, J. S., Massengill, L. W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Conduction Degradation Doping FinFET FinFETs Irradiation Leakage Leakage current Leakage currents Logic gates MOSFET circuits MOSFETs Oscillators Radiation Radiation dosage Radiation effects Random access memory Static random access memory Technology Threshold voltage threshold voltage shift total ionizing dose Transistors
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