A Regulated Charge Pump for Tunneling Floating-Gate Transistors

Flash memory is an important component in many embedded system-on-a-chip applications, which drives the need to generate high write/erase voltages in generic CMOS processes. In this paper, we present a regulated, high-voltage charge pump for erasing Flash memory and floating-gate transistors. This 0...

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Veröffentlicht in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2017-03, Vol.64 (3), p.516-527
Hauptverfasser: Rumberg, Brandon, Graham, David W., Navidi, Mir Mohammad
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Sprache:eng
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