A Regulated Charge Pump for Tunneling Floating-Gate Transistors
Flash memory is an important component in many embedded system-on-a-chip applications, which drives the need to generate high write/erase voltages in generic CMOS processes. In this paper, we present a regulated, high-voltage charge pump for erasing Flash memory and floating-gate transistors. This 0...
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| Veröffentlicht in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2017-03, Vol.64 (3), p.516-527 |
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| container_title | IEEE transactions on circuits and systems. I, Regular papers |
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| creator | Rumberg, Brandon Graham, David W. Navidi, Mir Mohammad |
| description | Flash memory is an important component in many embedded system-on-a-chip applications, which drives the need to generate high write/erase voltages in generic CMOS processes. In this paper, we present a regulated, high-voltage charge pump for erasing Flash memory and floating-gate transistors. This 0.069-mm 2 charge pump was fabricated in a 0.35 μm standard CMOS process. While operating from a 2.5 V supply, the charge pump generates regulated voltages up to 16 V with a PSRR of 52 dB and an output impedance of 6.8 kQ. To reduce power consumption for use in battery-powered applications, this charge pump uses a variable-frequency regulation technique and a new circuit for minimizing short-circuit current in the clock-generation circuitry; the resulting charge pump is able to erase the charge on floating-gate transistors using only 1.45μJ. |
| doi_str_mv | 10.1109/TCSI.2016.2613080 |
| format | Article |
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In this paper, we present a regulated, high-voltage charge pump for erasing Flash memory and floating-gate transistors. This 0.069-mm 2 charge pump was fabricated in a 0.35 μm standard CMOS process. While operating from a 2.5 V supply, the charge pump generates regulated voltages up to 16 V with a PSRR of 52 dB and an output impedance of 6.8 kQ. 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To reduce power consumption for use in battery-powered applications, this charge pump uses a variable-frequency regulation technique and a new circuit for minimizing short-circuit current in the clock-generation circuitry; the resulting charge pump is able to erase the charge on floating-gate transistors using only 1.45μJ.</description><subject>Analog memory</subject><subject>Batteries</subject><subject>Charge pumps</subject><subject>closed-loop systems</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>CMOS process</subject><subject>Components industry</subject><subject>Computer memory</subject><subject>Embedded systems</subject><subject>flash memories</subject><subject>Flash memory (computers)</subject><subject>floating-gate transistors</subject><subject>Input output</subject><subject>Logic gates</subject><subject>Power consumption</subject><subject>Semiconductor devices</subject><subject>Short circuits</subject><subject>short-circuit currents</subject><subject>System on chip</subject><subject>Transistors</subject><subject>Tunneling</subject><subject>variable-frequency regulation</subject><subject>Voltage control</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFZ_gHhZ8Jy6X9mPk5Rga6GgaDwv23S2pqRJ3U0O_ns3tHia9_C8M8OD0D0lM0qJeSqLz9WMESpnTFJONLlAE5rnOktRXo5ZmExzpq_RTYx7QpghnE7Q8xx_wG5oXA9bXHy7sAP8PhyO2HcBl0PbQlO3O7xoOtenkC0TiMvg2ljHvgvxFl1510S4O88p-lq8lMVrtn5bror5OqsEYX3mtAQBWnORb6q8kqTSjHlCcsEV8RK8U1QokzvKBd84TZkXW2MMMO18pTSfosfT3mPofgaIvd13Q2jTSUu14mNXmUTRE1WFLsYA3h5DfXDh11JiR0929GRHT_bsKXUeTp0aAP55pSUz6Zc_McNiPg</recordid><startdate>20170301</startdate><enddate>20170301</enddate><creator>Rumberg, Brandon</creator><creator>Graham, David W.</creator><creator>Navidi, Mir Mohammad</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| source | IEEE Electronic Library (IEL) |
| subjects | Analog memory Batteries Charge pumps closed-loop systems CMOS CMOS integrated circuits CMOS process Components industry Computer memory Embedded systems flash memories Flash memory (computers) floating-gate transistors Input output Logic gates Power consumption Semiconductor devices Short circuits short-circuit currents System on chip Transistors Tunneling variable-frequency regulation Voltage control |
| title | A Regulated Charge Pump for Tunneling Floating-Gate Transistors |
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