Downscaling Metal-Oxide Thin-Film Transistors to Sub-50 nm in an Exquisite Film-Profile Engineering Approach

We report an exquisite, film-profile-engineering approach for producing nanometer-scale channel-length (L) ZnO thin-film transistors (TFTs). The scheme is based on a unique laminated structure in conjunction with a well-designed etching process for building a slender, suspending bridge that shadows...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-03, Vol.64 (3), p.1069-1075
Hauptverfasser:	Lyu, Rong-Jhe, Shie, Bo-Shiuan, Lin, Horng-Chih, Li, Pei-Wen, Huang, Tiao-Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Bridges Fabrication Film profile engineering (FPE) II-VI semiconductor materials Logic gates metal oxide (MO) Metal oxides short channel effects (SCEs) Thin film transistors thin-film transistors (TFTs) Tin Zinc oxide ZnO
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