Design and Characterization of High-Current Optical Darlington Transistor for Pulsed-Power Applications

A high-current and low on-state voltage optical Darlington transistor (ODT) is developed in this paper for high-power applications. The structure of this device includes a two-stage Darlington transistor in which the first stage is triggered optically using an infrared laser of an 808-nm wavelength....

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Veröffentlicht in:IEEE transactions on electron devices 2017-03, Vol.64 (3), p.769-778
Hauptverfasser: Mojab, Alireza, Mazumder, Sudip K.
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description A high-current and low on-state voltage optical Darlington transistor (ODT) is developed in this paper for high-power applications. The structure of this device includes a two-stage Darlington transistor in which the first stage is triggered optically using an infrared laser of an 808-nm wavelength. The photogenerated current in the first stage drives the second stage of the ODT for current amplification. The ON-state voltage of the proposed two-stage ODT is found to be 1.12 V at 50 A. The results show that a single-pipe laser with a low optical power of 2 W is sufficient to trigger this high-current optical switch. This can give us more flexibility to achieve an optimal tradeoff between the ON-state voltage and delay times. The experimental results show that the ODT has a breakdown voltage of 70 V and can operate at frequencies higher than 10 kHz. Thismakes it potentiallysuitable as an optical gate driver for applications including but not limited to pulsed-power and series-connectionof power semiconductor devices for voltage scaling, and as an auxiliary optical-triggering device for anode- or even gate-currentmodulation of a high-frequency and high-power all-optical emitter turn-OFF thyristor.
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The structure of this device includes a two-stage Darlington transistor in which the first stage is triggered optically using an infrared laser of an 808-nm wavelength. The photogenerated current in the first stage drives the second stage of the ODT for current amplification. The ON-state voltage of the proposed two-stage ODT is found to be 1.12 V at 50 A. The results show that a single-pipe laser with a low optical power of 2 W is sufficient to trigger this high-current optical switch. This can give us more flexibility to achieve an optimal tradeoff between the ON-state voltage and delay times. The experimental results show that the ODT has a breakdown voltage of 70 V and can operate at frequencies higher than 10 kHz. 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Thismakes it potentiallysuitable as an optical gate driver for applications including but not limited to pulsed-power and series-connectionof power semiconductor devices for voltage scaling, and as an auxiliary optical-triggering device for anode- or even gate-currentmodulation of a high-frequency and high-power all-optical emitter turn-OFF thyristor.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2016.2635632</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0002-6157-9373</orcidid><oa>free_for_read</oa></addata></record>
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subjects Doping
Electric potential
Epitaxial layers
High current
Infrared lasers
Lighting
Long-wavelength laser illumination
optical Darlington transistors (ODTs)
Optical device fabrication
Optical switches
Optical switching
Power semiconductor devices
series connection of power semiconductor devices
single-bias all-optical emitter turn-OFF (ETO) thyristor
Thyristors
Transistors
wide-bandgap power semiconductor devices
title Design and Characterization of High-Current Optical Darlington Transistor for Pulsed-Power Applications
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