Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs
Dynamic RON and ramped substrate bias measurements are used to demonstrate size- and geometry-dependent dispersion in power transistors. This is due to a novel lateral transport mechanism in the semi-insulating carbon-doped GaN buffer in AlGaN/GaN high-electron-mobility transistors. We propose that...
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| Veröffentlicht in: | IEEE transactions on electron devices 2017-03, Vol.64 (3), p.977-983 |
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| container_title | IEEE transactions on electron devices |
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| creator | Chatterjee, Indranil Uren, Michael J. Karboyan, Serge Pooth, Alexander Moens, Peter Banerjee, Abhishek Kuball, Martin |
| description | Dynamic RON and ramped substrate bias measurements are used to demonstrate size- and geometry-dependent dispersion in power transistors. This is due to a novel lateral transport mechanism in the semi-insulating carbon-doped GaN buffer in AlGaN/GaN high-electron-mobility transistors. We propose that the vertical field generates a 2-D hole gas (2DHG) at the bottom of the GaN:C layer, with hole flow extending outside the isolated area. The device-to-device variation is due to a combination of widely spaced preferential leakage paths through the structure and lateral transport from those paths to trapping sites. The spread of the 2DHG outside the active area of the device strongly affects the result of substrate ramp measurements producing major differences between single and multifinger devices. In dynamic RON recovery measurements, single-finger devices show large device-to-device variation, with multifinger devices showing a small variation with the transient comprising the superposition of the recovery transient of multiple small single-finger devices. |
| doi_str_mv | 10.1109/TED.2016.2645279 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_1873462445</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7820083</ieee_id><sourcerecordid>1873462445</sourcerecordid><originalsourceid>FETCH-LOGICAL-c399t-429aa0dc063938b59c189f5f49c4154ac7460e15db7b5c579eec745204696083</originalsourceid><addsrcrecordid>eNo9UD1PwzAQtRBIlMKOxGKJ2a2_HY8lLS1SgIHslpNeaKqSBDsd-Pe4KmI4ne7ee_dOD6F7RmeMUTsvV8sZp0zPuJaKG3uBJkwpQ6yW-hJNKGUZsSIT1-gmxn0atZR8gorCjxD8Aec7Hz4Bl8F3cejDiNsOjzvAuQ9V35FlP8AWPx2bBsIJWhzW_m2eiiTwo8Wb1WsZb9FV4w8R7v76FJXPqzLfkOJ9_ZIvClILa0ciufWebmuqRfqoUrZmmW1UI20tmZK-NlJTYGpbmUrVyliAtFKcSm01zcQUPZ7PDqH_PkIc3b4_hi45OpYZITWXUiUWPbPq0McYoHFDaL98-HGMulNkLkXmTpG5v8iS5OEsaQHgn24yTpOr-AVaRWP7</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1873462445</pqid></control><display><type>article</type><title>Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs</title><source>IEEE Electronic Library (IEL)</source><creator>Chatterjee, Indranil ; Uren, Michael J. ; Karboyan, Serge ; Pooth, Alexander ; Moens, Peter ; Banerjee, Abhishek ; Kuball, Martin</creator><creatorcontrib>Chatterjee, Indranil ; Uren, Michael J. ; Karboyan, Serge ; Pooth, Alexander ; Moens, Peter ; Banerjee, Abhishek ; Kuball, Martin</creatorcontrib><description>Dynamic RON and ramped substrate bias measurements are used to demonstrate size- and geometry-dependent dispersion in power transistors. This is due to a novel lateral transport mechanism in the semi-insulating carbon-doped GaN buffer in AlGaN/GaN high-electron-mobility transistors. We propose that the vertical field generates a 2-D hole gas (2DHG) at the bottom of the GaN:C layer, with hole flow extending outside the isolated area. The device-to-device variation is due to a combination of widely spaced preferential leakage paths through the structure and lateral transport from those paths to trapping sites. The spread of the 2DHG outside the active area of the device strongly affects the result of substrate ramp measurements producing major differences between single and multifinger devices. In dynamic RON recovery measurements, single-finger devices show large device-to-device variation, with multifinger devices showing a small variation with the transient comprising the superposition of the recovery transient of multiple small single-finger devices.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2016.2645279</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>2-D hole gas (2DHG) ; Aluminum gallium nitrides ; carbon doping ; Charge carrier processes ; current collapse ; dynamic RON ; Gallium nitrides ; GaN-on-silicon ; HEMTs ; high-electron-mobility transistors (HEMTs) ; MODFETs ; power transistors ; Silicon substrates ; Substrates ; Temperature measurement ; threading dislocation ; Two dimensional hole gas</subject><ispartof>IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.977-983</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-429aa0dc063938b59c189f5f49c4154ac7460e15db7b5c579eec745204696083</citedby><cites>FETCH-LOGICAL-c399t-429aa0dc063938b59c189f5f49c4154ac7460e15db7b5c579eec745204696083</cites><orcidid>0000-0002-8904-0580</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7820083$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7820083$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chatterjee, Indranil</creatorcontrib><creatorcontrib>Uren, Michael J.</creatorcontrib><creatorcontrib>Karboyan, Serge</creatorcontrib><creatorcontrib>Pooth, Alexander</creatorcontrib><creatorcontrib>Moens, Peter</creatorcontrib><creatorcontrib>Banerjee, Abhishek</creatorcontrib><creatorcontrib>Kuball, Martin</creatorcontrib><title>Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Dynamic RON and ramped substrate bias measurements are used to demonstrate size- and geometry-dependent dispersion in power transistors. This is due to a novel lateral transport mechanism in the semi-insulating carbon-doped GaN buffer in AlGaN/GaN high-electron-mobility transistors. We propose that the vertical field generates a 2-D hole gas (2DHG) at the bottom of the GaN:C layer, with hole flow extending outside the isolated area. The device-to-device variation is due to a combination of widely spaced preferential leakage paths through the structure and lateral transport from those paths to trapping sites. The spread of the 2DHG outside the active area of the device strongly affects the result of substrate ramp measurements producing major differences between single and multifinger devices. In dynamic RON recovery measurements, single-finger devices show large device-to-device variation, with multifinger devices showing a small variation with the transient comprising the superposition of the recovery transient of multiple small single-finger devices.</description><subject>2-D hole gas (2DHG)</subject><subject>Aluminum gallium nitrides</subject><subject>carbon doping</subject><subject>Charge carrier processes</subject><subject>current collapse</subject><subject>dynamic RON</subject><subject>Gallium nitrides</subject><subject>GaN-on-silicon</subject><subject>HEMTs</subject><subject>high-electron-mobility transistors (HEMTs)</subject><subject>MODFETs</subject><subject>power transistors</subject><subject>Silicon substrates</subject><subject>Substrates</subject><subject>Temperature measurement</subject><subject>threading dislocation</subject><subject>Two dimensional hole gas</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9UD1PwzAQtRBIlMKOxGKJ2a2_HY8lLS1SgIHslpNeaKqSBDsd-Pe4KmI4ne7ee_dOD6F7RmeMUTsvV8sZp0zPuJaKG3uBJkwpQ6yW-hJNKGUZsSIT1-gmxn0atZR8gorCjxD8Aec7Hz4Bl8F3cejDiNsOjzvAuQ9V35FlP8AWPx2bBsIJWhzW_m2eiiTwo8Wb1WsZb9FV4w8R7v76FJXPqzLfkOJ9_ZIvClILa0ciufWebmuqRfqoUrZmmW1UI20tmZK-NlJTYGpbmUrVyliAtFKcSm01zcQUPZ7PDqH_PkIc3b4_hi45OpYZITWXUiUWPbPq0McYoHFDaL98-HGMulNkLkXmTpG5v8iS5OEsaQHgn24yTpOr-AVaRWP7</recordid><startdate>20170301</startdate><enddate>20170301</enddate><creator>Chatterjee, Indranil</creator><creator>Uren, Michael J.</creator><creator>Karboyan, Serge</creator><creator>Pooth, Alexander</creator><creator>Moens, Peter</creator><creator>Banerjee, Abhishek</creator><creator>Kuball, Martin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-8904-0580</orcidid></search><sort><creationdate>20170301</creationdate><title>Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs</title><author>Chatterjee, Indranil ; Uren, Michael J. ; Karboyan, Serge ; Pooth, Alexander ; Moens, Peter ; Banerjee, Abhishek ; Kuball, Martin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-429aa0dc063938b59c189f5f49c4154ac7460e15db7b5c579eec745204696083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>2-D hole gas (2DHG)</topic><topic>Aluminum gallium nitrides</topic><topic>carbon doping</topic><topic>Charge carrier processes</topic><topic>current collapse</topic><topic>dynamic RON</topic><topic>Gallium nitrides</topic><topic>GaN-on-silicon</topic><topic>HEMTs</topic><topic>high-electron-mobility transistors (HEMTs)</topic><topic>MODFETs</topic><topic>power transistors</topic><topic>Silicon substrates</topic><topic>Substrates</topic><topic>Temperature measurement</topic><topic>threading dislocation</topic><topic>Two dimensional hole gas</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chatterjee, Indranil</creatorcontrib><creatorcontrib>Uren, Michael J.</creatorcontrib><creatorcontrib>Karboyan, Serge</creatorcontrib><creatorcontrib>Pooth, Alexander</creatorcontrib><creatorcontrib>Moens, Peter</creatorcontrib><creatorcontrib>Banerjee, Abhishek</creatorcontrib><creatorcontrib>Kuball, Martin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chatterjee, Indranil</au><au>Uren, Michael J.</au><au>Karboyan, Serge</au><au>Pooth, Alexander</au><au>Moens, Peter</au><au>Banerjee, Abhishek</au><au>Kuball, Martin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2017-03-01</date><risdate>2017</risdate><volume>64</volume><issue>3</issue><spage>977</spage><epage>983</epage><pages>977-983</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Dynamic RON and ramped substrate bias measurements are used to demonstrate size- and geometry-dependent dispersion in power transistors. This is due to a novel lateral transport mechanism in the semi-insulating carbon-doped GaN buffer in AlGaN/GaN high-electron-mobility transistors. We propose that the vertical field generates a 2-D hole gas (2DHG) at the bottom of the GaN:C layer, with hole flow extending outside the isolated area. The device-to-device variation is due to a combination of widely spaced preferential leakage paths through the structure and lateral transport from those paths to trapping sites. The spread of the 2DHG outside the active area of the device strongly affects the result of substrate ramp measurements producing major differences between single and multifinger devices. In dynamic RON recovery measurements, single-finger devices show large device-to-device variation, with multifinger devices showing a small variation with the transient comprising the superposition of the recovery transient of multiple small single-finger devices.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2016.2645279</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-8904-0580</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | 2-D hole gas (2DHG) Aluminum gallium nitrides carbon doping Charge carrier processes current collapse dynamic RON Gallium nitrides GaN-on-silicon HEMTs high-electron-mobility transistors (HEMTs) MODFETs power transistors Silicon substrates Substrates Temperature measurement threading dislocation Two dimensional hole gas |
| title | Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T21%3A56%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Lateral%20Charge%20Transport%20in%20the%20Carbon-Doped%20Buffer%20in%20AlGaN/GaN-on-Si%20HEMTs&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Chatterjee,%20Indranil&rft.date=2017-03-01&rft.volume=64&rft.issue=3&rft.spage=977&rft.epage=983&rft.pages=977-983&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2016.2645279&rft_dat=%3Cproquest_RIE%3E1873462445%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1873462445&rft_id=info:pmid/&rft_ieee_id=7820083&rfr_iscdi=true |