Dark Current Blooming in Pinned Photodiode CMOS Image Sensors

This paper demonstrates the existence of dark current blooming in pinned photodiode (PPD) CMOS image sensors (CISs) with the support of both experimental measurements and TCAD simulations. It is usually assumed that blooming can appear only under illumination, when the charge collected by a pixel ex...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-03, Vol.64 (3), p.1161-1166
Hauptverfasser:	Belloir, Jean-Marc, Lincelles, Jean-Baptiste, Pelamatti, Alice, Durnez, Clementine, Goiffon, Vincent, Virmontois, Cedric, Paillet, Philippe, Magnan, Pierre, Gilardx, Olivier
Format:	Artikel
Sprache:	eng
Schlagworte:	Active pixel sensor blooming CMOS image sensor (CIS) CMOS image sensors Dark current diffusion current Electric potential Engineering Sciences Epitaxial growth full well capacity (FWC) Image quality Lighting Other p-n junction P-n junctions Photodiodes pinned photodiode (PPD) reverse bias thermionic emission
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