Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emi...

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Veröffentlicht in:	IEEE journal of photovoltaics 2017-03, Vol.7 (2), p.437-443
Hauptverfasser:	Jaewon Oh, Dauksher, Bill, Bowden, Stuart, Tamizhmani, Govindasamy, Hacke, Peter, D'Amico, John
Format:	Artikel
Sprache:	eng
Schlagworte:	Corona Degradation Durability high voltage Photovoltaic cells potential-induced degradation (PID) Refractive index reliability Resistance sheet resistance Silicon nitride silicon nitride (SiN<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> x ) silicon nitride (SiNx) Sodium SOLAR ENERGY
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