Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation
We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emi...
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| Veröffentlicht in: | IEEE journal of photovoltaics 2017-03, Vol.7 (2), p.437-443 |
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| creator | Jaewon Oh Dauksher, Bill Bowden, Stuart Tamizhmani, Govindasamy Hacke, Peter D'Amico, John |
| description | We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiNx refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-s was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 × 10 21 cm -3 ), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). The emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility. |
| doi_str_mv | 10.1109/JPHOTOV.2016.2642952 |
| format | Article |
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The emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.</description><identifier>ISSN: 2156-3381</identifier><identifier>EISSN: 2156-3403</identifier><identifier>DOI: 10.1109/JPHOTOV.2016.2642952</identifier><identifier>CODEN: IJPEG8</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Corona ; Degradation ; Durability ; high voltage ; Photovoltaic cells ; potential-induced degradation (PID) ; Refractive index ; reliability ; Resistance ; sheet resistance ; Silicon nitride ; silicon nitride (SiN<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> x ) ; silicon nitride (SiNx) ; Sodium ; SOLAR ENERGY</subject><ispartof>IEEE journal of photovoltaics, 2017-03, Vol.7 (2), p.437-443</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c438t-39f27a3a01da6710364316380f1bad517dc4d597599f9908067376ffcd7c9dd3</citedby><cites>FETCH-LOGICAL-c438t-39f27a3a01da6710364316380f1bad517dc4d597599f9908067376ffcd7c9dd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7814277$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,780,784,796,885,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7814277$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/servlets/purl/1360668$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Jaewon Oh</creatorcontrib><creatorcontrib>Dauksher, Bill</creatorcontrib><creatorcontrib>Bowden, Stuart</creatorcontrib><creatorcontrib>Tamizhmani, Govindasamy</creatorcontrib><creatorcontrib>Hacke, Peter</creatorcontrib><creatorcontrib>D'Amico, John</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><title>Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation</title><title>IEEE journal of photovoltaics</title><addtitle>JPHOTOV</addtitle><description>We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiNx refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-s was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 × 10 21 cm -3 ), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). The emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.</description><subject>Corona</subject><subject>Degradation</subject><subject>Durability</subject><subject>high voltage</subject><subject>Photovoltaic cells</subject><subject>potential-induced degradation (PID)</subject><subject>Refractive index</subject><subject>reliability</subject><subject>Resistance</subject><subject>sheet resistance</subject><subject>Silicon nitride</subject><subject>silicon nitride (SiN<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> x )</subject><subject>silicon nitride (SiNx)</subject><subject>Sodium</subject><subject>SOLAR ENERGY</subject><issn>2156-3381</issn><issn>2156-3403</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kU9LAzEQxRdRUNRPoIeg563JZjfZHEXrP8QWLV5DTCY2ookmWanf3iytzmVm4PceM7yqOiZ4QggWZ3fzm9li9jxpMGGThrWN6Jqtaq8hHatpi-n230x7slsdpvSGSzHcMdbuVflqiHkJET3lwThIKHhUdjS1FnRGwaIn97BCj2Cj0tl9A7r1BlZIeYOmHy7nUboEyAVJLmXlNYwe85DBZ6fe68IPGgy6hNeojMou-INqx6r3BIebvl8trqaLi5v6fnZ9e3F-X-uW9rmmwjZcUYWJUYwTTFlLCaM9tuRFmY5wo1vTCd4JYYXAPWaccmatNlwLY-h-dbK2DSk7mbTLoJc6eF8-k4QyzFhfoNM19BnD1wApy7cwRF_OkqTnZLQVrFDtmtIxpBTBys_oPlT8kQTLMQa5iUGOMchNDEV2tJY5APiX8J60Def0F1CRg3A</recordid><startdate>20170301</startdate><enddate>20170301</enddate><creator>Jaewon Oh</creator><creator>Dauksher, Bill</creator><creator>Bowden, Stuart</creator><creator>Tamizhmani, Govindasamy</creator><creator>Hacke, Peter</creator><creator>D'Amico, John</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>OIOZB</scope><scope>OTOTI</scope></search><sort><creationdate>20170301</creationdate><title>Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation</title><author>Jaewon Oh ; Dauksher, Bill ; Bowden, Stuart ; Tamizhmani, Govindasamy ; Hacke, Peter ; D'Amico, John</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c438t-39f27a3a01da6710364316380f1bad517dc4d597599f9908067376ffcd7c9dd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Corona</topic><topic>Degradation</topic><topic>Durability</topic><topic>high voltage</topic><topic>Photovoltaic cells</topic><topic>potential-induced degradation (PID)</topic><topic>Refractive index</topic><topic>reliability</topic><topic>Resistance</topic><topic>sheet resistance</topic><topic>Silicon nitride</topic><topic>silicon nitride (SiN<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> x )</topic><topic>silicon nitride (SiNx)</topic><topic>Sodium</topic><topic>SOLAR ENERGY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jaewon Oh</creatorcontrib><creatorcontrib>Dauksher, Bill</creatorcontrib><creatorcontrib>Bowden, Stuart</creatorcontrib><creatorcontrib>Tamizhmani, Govindasamy</creatorcontrib><creatorcontrib>Hacke, Peter</creatorcontrib><creatorcontrib>D'Amico, John</creatorcontrib><creatorcontrib>National Renewable Energy Lab. 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(NREL), Golden, CO (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation</atitle><jtitle>IEEE journal of photovoltaics</jtitle><stitle>JPHOTOV</stitle><date>2017-03-01</date><risdate>2017</risdate><volume>7</volume><issue>2</issue><spage>437</spage><epage>443</epage><pages>437-443</pages><issn>2156-3381</issn><eissn>2156-3403</eissn><coden>IJPEG8</coden><abstract>We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiNx refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-s was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 × 10 21 cm -3 ), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). The emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/JPHOTOV.2016.2642952</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Corona Degradation Durability high voltage Photovoltaic cells potential-induced degradation (PID) Refractive index reliability Resistance sheet resistance Silicon nitride silicon nitride (SiN<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> x ) silicon nitride (SiNx) Sodium SOLAR ENERGY |
| title | Further Studies on the Effect of SiNx Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation |
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