Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In2O3 nanostructured films
Undoped and niobium (Nb) doped indium oxide (In2O3) thin films are prepared by radio frequency magnetron sputtering technique. The effect of Nb on the structural, morphological, optical and electrical properties of In2O3films are analyzed using techniques such as X‐ray diffraction (XRD), micro‐Raman...
Gespeichert in:
| Veröffentlicht in: | Physica status solidi. C 2017-01, Vol.14 (1-2), p.n/a |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | n/a |
|---|---|
| container_issue | 1-2 |
| container_start_page | |
| container_title | Physica status solidi. C |
| container_volume | 14 |
| creator | Reshmi Krishnan, R. Chalana, S. R. Suresh, S. Sudheer, S. K. Sudarsanakumar, C. Santhosh Kumar, M. C. Mahadevan Pillai, V. P. |
| description | Undoped and niobium (Nb) doped indium oxide (In2O3) thin films are prepared by radio frequency magnetron sputtering technique. The effect of Nb on the structural, morphological, optical and electrical properties of In2O3films are analyzed using techniques such as X‐ray diffraction (XRD), micro‐Raman spectroscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, field emission scanning electron microscopy (FESEM), energy dispersive X‐ray spectroscopy, UV–visible spectroscopy, spectroscopic ellipsometry, photoluminescence spectroscopy and Hall effect measurements. XRD analysis reveals that the as‐deposited undoped and Nb doped films are polycrystalline in nature with cubic bixbyite structure. Raman analysis supports the presence of cubic bixbyite structure of In2O3in the films. XPS analysis shows a decrease of oxygen deficiency due to Nb and the existence of Nb as Nb4+ in the In2O3lattice. The band gap energy of the films increases with increase in Nb concentration. PL spectra reveal intense UV and visible emissions in all the films. Optical constants of the films are determined using spectroscopic ellipsometry. The thickness of films estimated using FESEM and ellipsometry are in good agreement. The carrier concentration, mobility and nature of carriers are measured using Hall measurement technique in Van der Pauw configuration at room temperature. |
| doi_str_mv | 10.1002/pssc.201600095 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_wiley</sourceid><recordid>TN_cdi_proquest_journals_1868750241</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4314623171</sourcerecordid><originalsourceid>FETCH-LOGICAL-p2735-f28707a6b81e167031b647367ea3c4fdae847b4c60f9e3a9c7dfa583a9d4c9663</originalsourceid><addsrcrecordid>eNo9kF9LwzAUxYsoOKevPgd8tTN_2qR9lLHpYDhx-hzSNtk6uiQmKbLv4Ic2dbqne87l8LuXkyS3CE4QhPjBel9PMEQUQljmZ8kIUQRTRDN8HnVBcUpJji6TK-93EJI8JkfJ90wpWQdgFHipQGNsqzfAaBC2Evjg-jr0TnT3YG-c3ZrObNp6sMaGQQChGyC7CHC_1jpjpQut9APwbQ72YqNlcBHobR-CdLIBC41XBGihzf-BuFRtt_fXyYUSnZc3f3OcfMxn79PndLl6Wkwfl6nFjOSpwgWDTNCqQBJRBgmqaMYIZVKQOlONkEXGqqymUJWSiLJmjRJ5EVWT1SWlZJzcHbnx389e-sB3pnc6nuSxp4LlEGcopspj6qvt5IFb1-6FO3AE-VA3H-rmp7r563o9PTnyA-63eJg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1868750241</pqid></control><display><type>article</type><title>Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In2O3 nanostructured films</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Reshmi Krishnan, R. ; Chalana, S. R. ; Suresh, S. ; Sudheer, S. K. ; Sudarsanakumar, C. ; Santhosh Kumar, M. C. ; Mahadevan Pillai, V. P.</creator><creatorcontrib>Reshmi Krishnan, R. ; Chalana, S. R. ; Suresh, S. ; Sudheer, S. K. ; Sudarsanakumar, C. ; Santhosh Kumar, M. C. ; Mahadevan Pillai, V. P.</creatorcontrib><description>Undoped and niobium (Nb) doped indium oxide (In2O3) thin films are prepared by radio frequency magnetron sputtering technique. The effect of Nb on the structural, morphological, optical and electrical properties of In2O3films are analyzed using techniques such as X‐ray diffraction (XRD), micro‐Raman spectroscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, field emission scanning electron microscopy (FESEM), energy dispersive X‐ray spectroscopy, UV–visible spectroscopy, spectroscopic ellipsometry, photoluminescence spectroscopy and Hall effect measurements. XRD analysis reveals that the as‐deposited undoped and Nb doped films are polycrystalline in nature with cubic bixbyite structure. Raman analysis supports the presence of cubic bixbyite structure of In2O3in the films. XPS analysis shows a decrease of oxygen deficiency due to Nb and the existence of Nb as Nb4+ in the In2O3lattice. The band gap energy of the films increases with increase in Nb concentration. PL spectra reveal intense UV and visible emissions in all the films. Optical constants of the films are determined using spectroscopic ellipsometry. The thickness of films estimated using FESEM and ellipsometry are in good agreement. The carrier concentration, mobility and nature of carriers are measured using Hall measurement technique in Van der Pauw configuration at room temperature.</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201600095</identifier><language>eng</language><publisher>Berlin: WILEY‐VCH Verlag Berlin GmbH</publisher><subject>doping ; indium oxide ; Measurement techniques ; Morphology ; photoluminescence ; Scanning electron microscopy ; spectroscopic ellipsometry ; Spectrum analysis ; X-rays</subject><ispartof>Physica status solidi. C, 2017-01, Vol.14 (1-2), p.n/a</ispartof><rights>2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.201600095$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.201600095$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,777,781,1412,27905,27906,45555,45556</link.rule.ids></links><search><creatorcontrib>Reshmi Krishnan, R.</creatorcontrib><creatorcontrib>Chalana, S. R.</creatorcontrib><creatorcontrib>Suresh, S.</creatorcontrib><creatorcontrib>Sudheer, S. K.</creatorcontrib><creatorcontrib>Sudarsanakumar, C.</creatorcontrib><creatorcontrib>Santhosh Kumar, M. C.</creatorcontrib><creatorcontrib>Mahadevan Pillai, V. P.</creatorcontrib><title>Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In2O3 nanostructured films</title><title>Physica status solidi. C</title><description>Undoped and niobium (Nb) doped indium oxide (In2O3) thin films are prepared by radio frequency magnetron sputtering technique. The effect of Nb on the structural, morphological, optical and electrical properties of In2O3films are analyzed using techniques such as X‐ray diffraction (XRD), micro‐Raman spectroscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, field emission scanning electron microscopy (FESEM), energy dispersive X‐ray spectroscopy, UV–visible spectroscopy, spectroscopic ellipsometry, photoluminescence spectroscopy and Hall effect measurements. XRD analysis reveals that the as‐deposited undoped and Nb doped films are polycrystalline in nature with cubic bixbyite structure. Raman analysis supports the presence of cubic bixbyite structure of In2O3in the films. XPS analysis shows a decrease of oxygen deficiency due to Nb and the existence of Nb as Nb4+ in the In2O3lattice. The band gap energy of the films increases with increase in Nb concentration. PL spectra reveal intense UV and visible emissions in all the films. Optical constants of the films are determined using spectroscopic ellipsometry. The thickness of films estimated using FESEM and ellipsometry are in good agreement. The carrier concentration, mobility and nature of carriers are measured using Hall measurement technique in Van der Pauw configuration at room temperature.</description><subject>doping</subject><subject>indium oxide</subject><subject>Measurement techniques</subject><subject>Morphology</subject><subject>photoluminescence</subject><subject>Scanning electron microscopy</subject><subject>spectroscopic ellipsometry</subject><subject>Spectrum analysis</subject><subject>X-rays</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNo9kF9LwzAUxYsoOKevPgd8tTN_2qR9lLHpYDhx-hzSNtk6uiQmKbLv4Ic2dbqne87l8LuXkyS3CE4QhPjBel9PMEQUQljmZ8kIUQRTRDN8HnVBcUpJji6TK-93EJI8JkfJ90wpWQdgFHipQGNsqzfAaBC2Evjg-jr0TnT3YG-c3ZrObNp6sMaGQQChGyC7CHC_1jpjpQut9APwbQ72YqNlcBHobR-CdLIBC41XBGihzf-BuFRtt_fXyYUSnZc3f3OcfMxn79PndLl6Wkwfl6nFjOSpwgWDTNCqQBJRBgmqaMYIZVKQOlONkEXGqqymUJWSiLJmjRJ5EVWT1SWlZJzcHbnx389e-sB3pnc6nuSxp4LlEGcopspj6qvt5IFb1-6FO3AE-VA3H-rmp7r563o9PTnyA-63eJg</recordid><startdate>201701</startdate><enddate>201701</enddate><creator>Reshmi Krishnan, R.</creator><creator>Chalana, S. R.</creator><creator>Suresh, S.</creator><creator>Sudheer, S. K.</creator><creator>Sudarsanakumar, C.</creator><creator>Santhosh Kumar, M. C.</creator><creator>Mahadevan Pillai, V. P.</creator><general>WILEY‐VCH Verlag Berlin GmbH</general><general>Wiley Subscription Services, Inc</general><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>201701</creationdate><title>Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In2O3 nanostructured films</title><author>Reshmi Krishnan, R. ; Chalana, S. R. ; Suresh, S. ; Sudheer, S. K. ; Sudarsanakumar, C. ; Santhosh Kumar, M. C. ; Mahadevan Pillai, V. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p2735-f28707a6b81e167031b647367ea3c4fdae847b4c60f9e3a9c7dfa583a9d4c9663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>doping</topic><topic>indium oxide</topic><topic>Measurement techniques</topic><topic>Morphology</topic><topic>photoluminescence</topic><topic>Scanning electron microscopy</topic><topic>spectroscopic ellipsometry</topic><topic>Spectrum analysis</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Reshmi Krishnan, R.</creatorcontrib><creatorcontrib>Chalana, S. R.</creatorcontrib><creatorcontrib>Suresh, S.</creatorcontrib><creatorcontrib>Sudheer, S. K.</creatorcontrib><creatorcontrib>Sudarsanakumar, C.</creatorcontrib><creatorcontrib>Santhosh Kumar, M. C.</creatorcontrib><creatorcontrib>Mahadevan Pillai, V. P.</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Reshmi Krishnan, R.</au><au>Chalana, S. R.</au><au>Suresh, S.</au><au>Sudheer, S. K.</au><au>Sudarsanakumar, C.</au><au>Santhosh Kumar, M. C.</au><au>Mahadevan Pillai, V. P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In2O3 nanostructured films</atitle><jtitle>Physica status solidi. C</jtitle><date>2017-01</date><risdate>2017</risdate><volume>14</volume><issue>1-2</issue><epage>n/a</epage><issn>1862-6351</issn><eissn>1610-1642</eissn><abstract>Undoped and niobium (Nb) doped indium oxide (In2O3) thin films are prepared by radio frequency magnetron sputtering technique. The effect of Nb on the structural, morphological, optical and electrical properties of In2O3films are analyzed using techniques such as X‐ray diffraction (XRD), micro‐Raman spectroscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, field emission scanning electron microscopy (FESEM), energy dispersive X‐ray spectroscopy, UV–visible spectroscopy, spectroscopic ellipsometry, photoluminescence spectroscopy and Hall effect measurements. XRD analysis reveals that the as‐deposited undoped and Nb doped films are polycrystalline in nature with cubic bixbyite structure. Raman analysis supports the presence of cubic bixbyite structure of In2O3in the films. XPS analysis shows a decrease of oxygen deficiency due to Nb and the existence of Nb as Nb4+ in the In2O3lattice. The band gap energy of the films increases with increase in Nb concentration. PL spectra reveal intense UV and visible emissions in all the films. Optical constants of the films are determined using spectroscopic ellipsometry. The thickness of films estimated using FESEM and ellipsometry are in good agreement. The carrier concentration, mobility and nature of carriers are measured using Hall measurement technique in Van der Pauw configuration at room temperature.</abstract><cop>Berlin</cop><pub>WILEY‐VCH Verlag Berlin GmbH</pub><doi>10.1002/pssc.201600095</doi><tpages>15</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1862-6351 |
| ispartof | Physica status solidi. C, 2017-01, Vol.14 (1-2), p.n/a |
| issn | 1862-6351 1610-1642 |
| language | eng |
| recordid | cdi_proquest_journals_1868750241 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | doping indium oxide Measurement techniques Morphology photoluminescence Scanning electron microscopy spectroscopic ellipsometry Spectrum analysis X-rays |
| title | Effect of Nb doping on the structural, morphological, optical and electrical properties of RF magnetron sputtered In2O3 nanostructured films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T02%3A50%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_wiley&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20Nb%20doping%20on%20the%20structural,%20morphological,%20optical%20and%20electrical%20properties%20of%20RF%20magnetron%20sputtered%20In2O3%20nanostructured%20films&rft.jtitle=Physica%20status%20solidi.%20C&rft.au=Reshmi%20Krishnan,%20R.&rft.date=2017-01&rft.volume=14&rft.issue=1-2&rft.epage=n/a&rft.issn=1862-6351&rft.eissn=1610-1642&rft_id=info:doi/10.1002/pssc.201600095&rft_dat=%3Cproquest_wiley%3E4314623171%3C/proquest_wiley%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1868750241&rft_id=info:pmid/&rfr_iscdi=true |