Cryogenic Characterization of FBK HD Near-UV Sensitive SiPMs
We report on the characterization of near-ultraviolet high-density silicon photomultiplier (SiPM) developed at Fondazione Bruno Kessler (FBK) at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noise of the SiPMs between 40 and 300 K. Moreover, an a...
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| Veröffentlicht in: | IEEE transactions on electron devices 2017-02, Vol.64 (2), p.521-526 |
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| container_title | IEEE transactions on electron devices |
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| creator | Acerbi, Fabio Davini, Stefano Ferri, Alessandro Galbiati, Cristiano Giovanetti, Graham Gola, Alberto Korga, George Mandarano, Andrea Marcante, Marco Paternoster, Giovanni Piemonte, Claudio Razeto, Alessandro Regazzoni, Veronica Sablone, Davide Savarese, Claudio Zappala, Gaetano Zorzi, Nicola |
| description | We report on the characterization of near-ultraviolet high-density silicon photomultiplier (SiPM) developed at Fondazione Bruno Kessler (FBK) at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noise of the SiPMs between 40 and 300 K. Moreover, an analysis program and data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to seven orders of magnitude between room temperature and 40 K. We demonstrate that it is possible to operate the FBK near-ultraviolet high density SiPMs at temperatures lower than 100 K with a dark rate below 0.01 cps/mm 2 and total correlated noise probability below 35% at an overvoltage of 6 V. These results are relevant for the development of future cryogenic particle detectors using SiPMs as photosensors. |
| doi_str_mv | 10.1109/TED.2016.2641586 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_1860898492</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7807295</ieee_id><sourcerecordid>1860898492</sourcerecordid><originalsourceid>FETCH-LOGICAL-c333t-45dc21078590e0fa8f5525d6330ef4345d3eb8fd4fd4af41f9dc265bb193b6d63</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKt3wcuC56353gS86La1Yv2Atl5DdjvRFN3VZCvUX29KizAwDPO8M_AgdE7wgBCsr-aj4YBiIgdUciKUPEA9IkSRa8nlIephTFSumWLH6CTGVRol57SHrsuwad-g8XVWvttg6w6C_7Wdb5usddn49iGbDLMnsCFfvGYzaKLv_A9kM__yGE_RkbMfEc72vY8W49G8nOTT57v78maa14yxLudiWVOCCyU0BuysckJQsZSMYXCcpTWDSrklT2UdJ04nXoqqIppVMnF9dLm7-xXa7zXEzqzadWjSS0OUxEorrmmi8I6qQxtjAGe-gv-0YWMINltHJjkyW0dm7yhFLnYRDwD_eKFwQbVgf5_1YEs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1860898492</pqid></control><display><type>article</type><title>Cryogenic Characterization of FBK HD Near-UV Sensitive SiPMs</title><source>IEEE Electronic Library (IEL)</source><creator>Acerbi, Fabio ; Davini, Stefano ; Ferri, Alessandro ; Galbiati, Cristiano ; Giovanetti, Graham ; Gola, Alberto ; Korga, George ; Mandarano, Andrea ; Marcante, Marco ; Paternoster, Giovanni ; Piemonte, Claudio ; Razeto, Alessandro ; Regazzoni, Veronica ; Sablone, Davide ; Savarese, Claudio ; Zappala, Gaetano ; Zorzi, Nicola</creator><creatorcontrib>Acerbi, Fabio ; Davini, Stefano ; Ferri, Alessandro ; Galbiati, Cristiano ; Giovanetti, Graham ; Gola, Alberto ; Korga, George ; Mandarano, Andrea ; Marcante, Marco ; Paternoster, Giovanni ; Piemonte, Claudio ; Razeto, Alessandro ; Regazzoni, Veronica ; Sablone, Davide ; Savarese, Claudio ; Zappala, Gaetano ; Zorzi, Nicola</creatorcontrib><description>We report on the characterization of near-ultraviolet high-density silicon photomultiplier (SiPM) developed at Fondazione Bruno Kessler (FBK) at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noise of the SiPMs between 40 and 300 K. Moreover, an analysis program and data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to seven orders of magnitude between room temperature and 40 K. We demonstrate that it is possible to operate the FBK near-ultraviolet high density SiPMs at temperatures lower than 100 K with a dark rate below 0.01 cps/mm 2 and total correlated noise probability below 35% at an overvoltage of 6 V. These results are relevant for the development of future cryogenic particle detectors using SiPMs as photosensors.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2016.2641586</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Afterpulsing ; avalanche photodiode ; crosstalk ; Cryogenics ; dark noise ; Data acquisition ; Radiation detectors ; silicon photomultiplier (SiPM) ; Temperature distribution ; Temperature sensors ; Voltage control</subject><ispartof>IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.521-526</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-45dc21078590e0fa8f5525d6330ef4345d3eb8fd4fd4af41f9dc265bb193b6d63</citedby><cites>FETCH-LOGICAL-c333t-45dc21078590e0fa8f5525d6330ef4345d3eb8fd4fd4af41f9dc265bb193b6d63</cites><orcidid>0000-0002-6669-5728 ; 0000-0002-6650-3925</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7807295$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7807295$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Acerbi, Fabio</creatorcontrib><creatorcontrib>Davini, Stefano</creatorcontrib><creatorcontrib>Ferri, Alessandro</creatorcontrib><creatorcontrib>Galbiati, Cristiano</creatorcontrib><creatorcontrib>Giovanetti, Graham</creatorcontrib><creatorcontrib>Gola, Alberto</creatorcontrib><creatorcontrib>Korga, George</creatorcontrib><creatorcontrib>Mandarano, Andrea</creatorcontrib><creatorcontrib>Marcante, Marco</creatorcontrib><creatorcontrib>Paternoster, Giovanni</creatorcontrib><creatorcontrib>Piemonte, Claudio</creatorcontrib><creatorcontrib>Razeto, Alessandro</creatorcontrib><creatorcontrib>Regazzoni, Veronica</creatorcontrib><creatorcontrib>Sablone, Davide</creatorcontrib><creatorcontrib>Savarese, Claudio</creatorcontrib><creatorcontrib>Zappala, Gaetano</creatorcontrib><creatorcontrib>Zorzi, Nicola</creatorcontrib><title>Cryogenic Characterization of FBK HD Near-UV Sensitive SiPMs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We report on the characterization of near-ultraviolet high-density silicon photomultiplier (SiPM) developed at Fondazione Bruno Kessler (FBK) at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noise of the SiPMs between 40 and 300 K. Moreover, an analysis program and data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to seven orders of magnitude between room temperature and 40 K. We demonstrate that it is possible to operate the FBK near-ultraviolet high density SiPMs at temperatures lower than 100 K with a dark rate below 0.01 cps/mm 2 and total correlated noise probability below 35% at an overvoltage of 6 V. These results are relevant for the development of future cryogenic particle detectors using SiPMs as photosensors.</description><subject>Afterpulsing</subject><subject>avalanche photodiode</subject><subject>crosstalk</subject><subject>Cryogenics</subject><subject>dark noise</subject><subject>Data acquisition</subject><subject>Radiation detectors</subject><subject>silicon photomultiplier (SiPM)</subject><subject>Temperature distribution</subject><subject>Temperature sensors</subject><subject>Voltage control</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKt3wcuC56353gS86La1Yv2Atl5DdjvRFN3VZCvUX29KizAwDPO8M_AgdE7wgBCsr-aj4YBiIgdUciKUPEA9IkSRa8nlIephTFSumWLH6CTGVRol57SHrsuwad-g8XVWvttg6w6C_7Wdb5usddn49iGbDLMnsCFfvGYzaKLv_A9kM__yGE_RkbMfEc72vY8W49G8nOTT57v78maa14yxLudiWVOCCyU0BuysckJQsZSMYXCcpTWDSrklT2UdJ04nXoqqIppVMnF9dLm7-xXa7zXEzqzadWjSS0OUxEorrmmi8I6qQxtjAGe-gv-0YWMINltHJjkyW0dm7yhFLnYRDwD_eKFwQbVgf5_1YEs</recordid><startdate>20170201</startdate><enddate>20170201</enddate><creator>Acerbi, Fabio</creator><creator>Davini, Stefano</creator><creator>Ferri, Alessandro</creator><creator>Galbiati, Cristiano</creator><creator>Giovanetti, Graham</creator><creator>Gola, Alberto</creator><creator>Korga, George</creator><creator>Mandarano, Andrea</creator><creator>Marcante, Marco</creator><creator>Paternoster, Giovanni</creator><creator>Piemonte, Claudio</creator><creator>Razeto, Alessandro</creator><creator>Regazzoni, Veronica</creator><creator>Sablone, Davide</creator><creator>Savarese, Claudio</creator><creator>Zappala, Gaetano</creator><creator>Zorzi, Nicola</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6669-5728</orcidid><orcidid>https://orcid.org/0000-0002-6650-3925</orcidid></search><sort><creationdate>20170201</creationdate><title>Cryogenic Characterization of FBK HD Near-UV Sensitive SiPMs</title><author>Acerbi, Fabio ; Davini, Stefano ; Ferri, Alessandro ; Galbiati, Cristiano ; Giovanetti, Graham ; Gola, Alberto ; Korga, George ; Mandarano, Andrea ; Marcante, Marco ; Paternoster, Giovanni ; Piemonte, Claudio ; Razeto, Alessandro ; Regazzoni, Veronica ; Sablone, Davide ; Savarese, Claudio ; Zappala, Gaetano ; Zorzi, Nicola</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-45dc21078590e0fa8f5525d6330ef4345d3eb8fd4fd4af41f9dc265bb193b6d63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Afterpulsing</topic><topic>avalanche photodiode</topic><topic>crosstalk</topic><topic>Cryogenics</topic><topic>dark noise</topic><topic>Data acquisition</topic><topic>Radiation detectors</topic><topic>silicon photomultiplier (SiPM)</topic><topic>Temperature distribution</topic><topic>Temperature sensors</topic><topic>Voltage control</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Acerbi, Fabio</creatorcontrib><creatorcontrib>Davini, Stefano</creatorcontrib><creatorcontrib>Ferri, Alessandro</creatorcontrib><creatorcontrib>Galbiati, Cristiano</creatorcontrib><creatorcontrib>Giovanetti, Graham</creatorcontrib><creatorcontrib>Gola, Alberto</creatorcontrib><creatorcontrib>Korga, George</creatorcontrib><creatorcontrib>Mandarano, Andrea</creatorcontrib><creatorcontrib>Marcante, Marco</creatorcontrib><creatorcontrib>Paternoster, Giovanni</creatorcontrib><creatorcontrib>Piemonte, Claudio</creatorcontrib><creatorcontrib>Razeto, Alessandro</creatorcontrib><creatorcontrib>Regazzoni, Veronica</creatorcontrib><creatorcontrib>Sablone, Davide</creatorcontrib><creatorcontrib>Savarese, Claudio</creatorcontrib><creatorcontrib>Zappala, Gaetano</creatorcontrib><creatorcontrib>Zorzi, Nicola</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Acerbi, Fabio</au><au>Davini, Stefano</au><au>Ferri, Alessandro</au><au>Galbiati, Cristiano</au><au>Giovanetti, Graham</au><au>Gola, Alberto</au><au>Korga, George</au><au>Mandarano, Andrea</au><au>Marcante, Marco</au><au>Paternoster, Giovanni</au><au>Piemonte, Claudio</au><au>Razeto, Alessandro</au><au>Regazzoni, Veronica</au><au>Sablone, Davide</au><au>Savarese, Claudio</au><au>Zappala, Gaetano</au><au>Zorzi, Nicola</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cryogenic Characterization of FBK HD Near-UV Sensitive SiPMs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2017-02-01</date><risdate>2017</risdate><volume>64</volume><issue>2</issue><spage>521</spage><epage>526</epage><pages>521-526</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We report on the characterization of near-ultraviolet high-density silicon photomultiplier (SiPM) developed at Fondazione Bruno Kessler (FBK) at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noise of the SiPMs between 40 and 300 K. Moreover, an analysis program and data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to seven orders of magnitude between room temperature and 40 K. We demonstrate that it is possible to operate the FBK near-ultraviolet high density SiPMs at temperatures lower than 100 K with a dark rate below 0.01 cps/mm 2 and total correlated noise probability below 35% at an overvoltage of 6 V. These results are relevant for the development of future cryogenic particle detectors using SiPMs as photosensors.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2016.2641586</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-6669-5728</orcidid><orcidid>https://orcid.org/0000-0002-6650-3925</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Afterpulsing avalanche photodiode crosstalk Cryogenics dark noise Data acquisition Radiation detectors silicon photomultiplier (SiPM) Temperature distribution Temperature sensors Voltage control |
| title | Cryogenic Characterization of FBK HD Near-UV Sensitive SiPMs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T12%3A25%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Cryogenic%20Characterization%20of%20FBK%20HD%20Near-UV%20Sensitive%20SiPMs&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Acerbi,%20Fabio&rft.date=2017-02-01&rft.volume=64&rft.issue=2&rft.spage=521&rft.epage=526&rft.pages=521-526&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2016.2641586&rft_dat=%3Cproquest_RIE%3E1860898492%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1860898492&rft_id=info:pmid/&rft_ieee_id=7807295&rfr_iscdi=true |