Enhanced Sensitivity of CMOS Image Sensors by Stacked Diodes

We have investigated and compared the performance of photodiodes built with stacked p/n junctions operating in parallel versus conventional ones made with single p/n junctions. We propose a method to characterize and compare photodiodes sensitivity. For this purpose, a dedicated chip in the standard...

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Veröffentlicht in:	IEEE sensors journal 2016-12, Vol.16 (23), p.8448-8455
Hauptverfasser:	Lenero-Bardallo, Juan Antonio, Delgado-Restituto, Manuel, Carmona-Galan, Ricardo, Rodriguez-Vazquez, Angel
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS event-based vision sensors Image enhancement Junctions Mathematical model NIR Oscillators P-n junctions photodiode characterization Photodiodes Sensitivity Sensitivity enhancement spectral sensitivity Stacked photodiodes
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