Optical Characterization of Chalcogenide Ge-Sb-Se Waveguides at Telecom Wavelengths
Nonlinear single-mode Ge 28 Sb 12 Se 60 strip waveguides were demonstrated at 1.53-1.55 μm. The waveguides were fabricated by photo-or e-beam lithography, followed by thermal evaporation and lift-off. The linear propagation loss, ranging from 4.0 to 6.1 dB/cm, is compared for waveguides under variou...
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| Veröffentlicht in: | IEEE photonics technology letters 2016-12, Vol.28 (23), p.2720-2723 |
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| creator | Krogstad, Molly R. Ahn, Sungmo Park, Wounjhang Gopinath, Juliet T. |
| description | Nonlinear single-mode Ge 28 Sb 12 Se 60 strip waveguides were demonstrated at 1.53-1.55 μm. The waveguides were fabricated by photo-or e-beam lithography, followed by thermal evaporation and lift-off. The linear propagation loss, ranging from 4.0 to 6.1 dB/cm, is compared for waveguides under various fabrication conditions. Using measurements of the power-dependent transmission and spectral broadening, the nonlinear loss β and nonlinear refractive index n 2 of the waveguides fabricated with e-beam lithography are determined to be 0.014±0.003 cm/GW and 5±2×10 -19 m 2 /W, respectively, at 1.55 μm. Given the large measured figure of merit, n 2 /(βλ) = 2.3±0.9, this platform holds promise for nonlinear applications at telecom wavelengths. |
| doi_str_mv | 10.1109/LPT.2016.2615189 |
| format | Article |
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The waveguides were fabricated by photo-or e-beam lithography, followed by thermal evaporation and lift-off. The linear propagation loss, ranging from 4.0 to 6.1 dB/cm, is compared for waveguides under various fabrication conditions. Using measurements of the power-dependent transmission and spectral broadening, the nonlinear loss β and nonlinear refractive index n 2 of the waveguides fabricated with e-beam lithography are determined to be 0.014±0.003 cm/GW and 5±2×10 -19 m 2 /W, respectively, at 1.55 μm. Given the large measured figure of merit, n 2 /(βλ) = 2.3±0.9, this platform holds promise for nonlinear applications at telecom wavelengths.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2016.2615189</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Amorphous materials ; Chalcogenides ; Electron beams ; Figure of merit ; Lithography ; Loss measurement ; Nonlinear optics ; Optical device fabrication ; Optical planar waveguides ; Optical properties ; Optical waveguides ; Refractivity ; Telecommunications ; Waveguides ; Wavelengths</subject><ispartof>IEEE photonics technology letters, 2016-12, Vol.28 (23), p.2720-2723</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The waveguides were fabricated by photo-or e-beam lithography, followed by thermal evaporation and lift-off. The linear propagation loss, ranging from 4.0 to 6.1 dB/cm, is compared for waveguides under various fabrication conditions. Using measurements of the power-dependent transmission and spectral broadening, the nonlinear loss β and nonlinear refractive index n 2 of the waveguides fabricated with e-beam lithography are determined to be 0.014±0.003 cm/GW and 5±2×10 -19 m 2 /W, respectively, at 1.55 μm. Given the large measured figure of merit, n 2 /(βλ) = 2.3±0.9, this platform holds promise for nonlinear applications at telecom wavelengths.</description><subject>Amorphous materials</subject><subject>Chalcogenides</subject><subject>Electron beams</subject><subject>Figure of merit</subject><subject>Lithography</subject><subject>Loss measurement</subject><subject>Nonlinear optics</subject><subject>Optical device fabrication</subject><subject>Optical planar waveguides</subject><subject>Optical properties</subject><subject>Optical waveguides</subject><subject>Refractivity</subject><subject>Telecommunications</subject><subject>Waveguides</subject><subject>Wavelengths</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><recordid>eNo9kM1Lw0AQxYMoWKt3wUvAc-rMfiSboxStQqFCKx6XzWa2TUmbupsK-te7tUXmMI_HezPwS5JbhBEilA_Tt8WIAeYjlqNEVZ4lAywFZoCFOI8aokbk8jK5CmENgEJyMUjms13fWNOm45Xxxvbkmx_TN9027dzBa223pG1TUzqhbF5lc0o_zBct99EKqenTBbVku82f29J22a_CdXLhTBvo5rSHyfvz02L8kk1nk9fx4zSzouB9RiYvrWNCVQYKsDKPU9fAy0rxqnZohQMnLVOgSjCmAk6SqUJgbQ1nTvFhcn-8u_Pd555Cr9fd3m_jS42KS8VLXmBMwTFlfReCJ6d3vtkY_60R9AGdjuj0AZ0-oYuVu2OlIaL_eCEVEwz4L28QabU</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>Krogstad, Molly R.</creator><creator>Ahn, Sungmo</creator><creator>Park, Wounjhang</creator><creator>Gopinath, Juliet T.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The waveguides were fabricated by photo-or e-beam lithography, followed by thermal evaporation and lift-off. The linear propagation loss, ranging from 4.0 to 6.1 dB/cm, is compared for waveguides under various fabrication conditions. Using measurements of the power-dependent transmission and spectral broadening, the nonlinear loss β and nonlinear refractive index n 2 of the waveguides fabricated with e-beam lithography are determined to be 0.014±0.003 cm/GW and 5±2×10 -19 m 2 /W, respectively, at 1.55 μm. Given the large measured figure of merit, n 2 /(βλ) = 2.3±0.9, this platform holds promise for nonlinear applications at telecom wavelengths.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2016.2615189</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-4189-6152</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Amorphous materials Chalcogenides Electron beams Figure of merit Lithography Loss measurement Nonlinear optics Optical device fabrication Optical planar waveguides Optical properties Optical waveguides Refractivity Telecommunications Waveguides Wavelengths |
| title | Optical Characterization of Chalcogenide Ge-Sb-Se Waveguides at Telecom Wavelengths |
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