Thermal Inductance in GaN Devices

Using the analogue of the electric inductance, we reveal the properties of the thermal inductance in GaN-based light-emitting diode devices by testing their transient thermal behaviors. We find that the devices exhibit a transient thermal response under step-down or step-up currents and observe nota...

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Veröffentlicht in:	IEEE electron device letters 2016-11, Vol.37 (11), p.1473-1476
Hauptverfasser:	Huaiyu Ye, Leung, Stanley Y. Y., Wong, Cell K. Y., Kai Lin, Xianping Chen, Jiajie Fan, Kjelstrup, Signe, Xuejun Fan, Guoqi Zhang
Format:	Artikel
Sprache:	eng
Schlagworte:	Current measurement Inductance Light emitting diodes Semiconductor device measurement Temperature measurement Temperature sensors thermal analysis Thermal inductance Transient analysis transient thermal behaviour
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