Impact of Sb Incorporation on MOVPE-Grown “Bulk” InGaAs(Sb)N Films for Solar Cell Application

We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relati...

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Veröffentlicht in:	IEEE journal of photovoltaics 2016-11, Vol.6 (6), p.1673-1677
Hauptverfasser:	Taewan Kim, Wood, Adam, Honghyuk Kim, Youngjo Kim, Jaejin Lee, Peterson, Mark, Yongkun Sin, Moss, Steven, Kuech, Thomas F., Babcock, Susan, Mawst, Luke J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Dilute-nitride materials Epitaxial growth Gallium arsenide III-V semiconductor materials Photovoltaic cells Silicon wafers thin-film devices
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