Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects

In the BEOL, as interconnect dimensions shrink and novel materials are used, it has become increasingly difficult for traditional PERR removal chemicals to meet the evolving material compatibility requirements. As a result, formulated cleans that specifically target these unique challenges are requi...

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Veröffentlicht in:	Solid state phenomena 2016-09, Vol.255, p.232-236
Hauptverfasser:	Lippy, Steven, Le, Quoc Toan, Murdoch, Gayle, Gonzalez, Victor V., Payne, Makonnen, Kesters, Els, Lieten, Ruben R., Holsteyns, Frank
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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