Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial wetti...

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Hauptverfasser: Garnier, Philippe, Toubal, M., Gabette, L., Broussous, Lucile, Carlier, J., Virgilio, C., Thomy, V., Nongaillard, B., Campistron, P., Besson, Pascal
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are detectable with this method. Filling time of TSV structures has also been measured.
ISSN:1012-0394
1662-9779
1662-9779
DOI:10.4028/www.scientific.net/SSP.255.129