Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry
Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial wetti...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are detectable with this method. Filling time of TSV structures has also been measured. |
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ISSN: | 1012-0394 1662-9779 1662-9779 |
DOI: | 10.4028/www.scientific.net/SSP.255.129 |