Characterization of Etch Residues Generated on Damascene Structures
For patterned TiN/silicon oxide/low-k dielectric stack, fluorinated etch residues were detected on the TiN surface, the dielectric sidewall and bottom, regardless of the low-k material used in the stack. XPS results showed that they consisted of polymer-based (CFx) residues deposited on trench sidew...
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| Veröffentlicht in: | Solid state phenomena 2016-09, Vol.255, p.227-231 |
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| container_title | Solid state phenomena |
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| creator | Kesters, Els Braun, S. Holsteyns, Frank Le, Quoc Toan Conard, T. Shen, M. Hoflijk, I. Burk, Y. |
| description | For patterned TiN/silicon oxide/low-k dielectric stack, fluorinated etch residues were detected on the TiN surface, the dielectric sidewall and bottom, regardless of the low-k material used in the stack. XPS results showed that they consisted of polymer-based (CFx) residues deposited on trench sidewall and bottom, and metal-based (TiFx) residues mainly deposited on top surface. In terms of post-etch residue removal, the efficiency of various wet clean solutions can be clearly distinguished for CFx, and TiFx using the same patterned porous low-k stack. These results also demonstrate that the removal of both TiFx and CFx residues generated during the plasma is possible in one step with optimized chemical and process. |
| doi_str_mv | 10.4028/www.scientific.net/SSP.255.227 |
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| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1817936235</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4176207831</sourcerecordid><originalsourceid>FETCH-LOGICAL-c295t-18de0431d78340582867f163ea6312c745d01e1329f3d40e95d94ba70f9588333</originalsourceid><addsrcrecordid>eNqNkE9LxDAQxYMouK5-h4Lgrd38bZKLKHVdhQXF1XOI6ZTt4rZrklL00xtZQY-eZph5vDfzQ-iC4IJjqmbjOBbBtdDFtmld0UGcrVaPBRWioFQeoAkpS5prKfVh6jGhOWaaH6OTEDYYM6KImqCqWltvXQTfftrY9l3WN9k8unX2BKGtBwjZAjrwNkKdpe2N3drg0iRbRT-4OHgIp-iosW8Bzn7qFL3czp-ru3z5sLivrpe5o1rEnKgaMGeklopxLBRVpWxIycCWjFAnuagxAcKobljNMWhRa_5qJW60UIoxNkXne9-d79_TZdFs-sF3KdKkZ6RmJWUiqS73Kuf7EDw0ZufbrfUfhmDzDc4kcOYXnEngTAJnEjiTwCWDq71B9LYLEdz6T87_LL4AWOB-VA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1817936235</pqid></control><display><type>article</type><title>Characterization of Etch Residues Generated on Damascene Structures</title><source>Scientific.net Journals</source><creator>Kesters, Els ; Braun, S. ; Holsteyns, Frank ; Le, Quoc Toan ; Conard, T. ; Shen, M. ; Hoflijk, I. ; Burk, Y.</creator><creatorcontrib>Kesters, Els ; Braun, S. ; Holsteyns, Frank ; Le, Quoc Toan ; Conard, T. ; Shen, M. ; Hoflijk, I. ; Burk, Y.</creatorcontrib><description>For patterned TiN/silicon oxide/low-k dielectric stack, fluorinated etch residues were detected on the TiN surface, the dielectric sidewall and bottom, regardless of the low-k material used in the stack. XPS results showed that they consisted of polymer-based (CFx) residues deposited on trench sidewall and bottom, and metal-based (TiFx) residues mainly deposited on top surface. In terms of post-etch residue removal, the efficiency of various wet clean solutions can be clearly distinguished for CFx, and TiFx using the same patterned porous low-k stack. These results also demonstrate that the removal of both TiFx and CFx residues generated during the plasma is possible in one step with optimized chemical and process.</description><identifier>ISSN: 1012-0394</identifier><identifier>ISSN: 1662-9779</identifier><identifier>EISSN: 1662-9779</identifier><identifier>DOI: 10.4028/www.scientific.net/SSP.255.227</identifier><language>eng</language><publisher>Zurich: Trans Tech Publications Ltd</publisher><ispartof>Solid state phenomena, 2016-09, Vol.255, p.227-231</ispartof><rights>2016 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. Sep 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/4433?width=600</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Kesters, Els</creatorcontrib><creatorcontrib>Braun, S.</creatorcontrib><creatorcontrib>Holsteyns, Frank</creatorcontrib><creatorcontrib>Le, Quoc Toan</creatorcontrib><creatorcontrib>Conard, T.</creatorcontrib><creatorcontrib>Shen, M.</creatorcontrib><creatorcontrib>Hoflijk, I.</creatorcontrib><creatorcontrib>Burk, Y.</creatorcontrib><title>Characterization of Etch Residues Generated on Damascene Structures</title><title>Solid state phenomena</title><description>For patterned TiN/silicon oxide/low-k dielectric stack, fluorinated etch residues were detected on the TiN surface, the dielectric sidewall and bottom, regardless of the low-k material used in the stack. XPS results showed that they consisted of polymer-based (CFx) residues deposited on trench sidewall and bottom, and metal-based (TiFx) residues mainly deposited on top surface. In terms of post-etch residue removal, the efficiency of various wet clean solutions can be clearly distinguished for CFx, and TiFx using the same patterned porous low-k stack. These results also demonstrate that the removal of both TiFx and CFx residues generated during the plasma is possible in one step with optimized chemical and process.</description><issn>1012-0394</issn><issn>1662-9779</issn><issn>1662-9779</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNqNkE9LxDAQxYMouK5-h4Lgrd38bZKLKHVdhQXF1XOI6ZTt4rZrklL00xtZQY-eZph5vDfzQ-iC4IJjqmbjOBbBtdDFtmld0UGcrVaPBRWioFQeoAkpS5prKfVh6jGhOWaaH6OTEDYYM6KImqCqWltvXQTfftrY9l3WN9k8unX2BKGtBwjZAjrwNkKdpe2N3drg0iRbRT-4OHgIp-iosW8Bzn7qFL3czp-ru3z5sLivrpe5o1rEnKgaMGeklopxLBRVpWxIycCWjFAnuagxAcKobljNMWhRa_5qJW60UIoxNkXne9-d79_TZdFs-sF3KdKkZ6RmJWUiqS73Kuf7EDw0ZufbrfUfhmDzDc4kcOYXnEngTAJnEjiTwCWDq71B9LYLEdz6T87_LL4AWOB-VA</recordid><startdate>20160901</startdate><enddate>20160901</enddate><creator>Kesters, Els</creator><creator>Braun, S.</creator><creator>Holsteyns, Frank</creator><creator>Le, Quoc Toan</creator><creator>Conard, T.</creator><creator>Shen, M.</creator><creator>Hoflijk, I.</creator><creator>Burk, Y.</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20160901</creationdate><title>Characterization of Etch Residues Generated on Damascene Structures</title><author>Kesters, Els ; Braun, S. ; Holsteyns, Frank ; Le, Quoc Toan ; Conard, T. ; Shen, M. ; Hoflijk, I. ; Burk, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-18de0431d78340582867f163ea6312c745d01e1329f3d40e95d94ba70f9588333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kesters, Els</creatorcontrib><creatorcontrib>Braun, S.</creatorcontrib><creatorcontrib>Holsteyns, Frank</creatorcontrib><creatorcontrib>Le, Quoc Toan</creatorcontrib><creatorcontrib>Conard, T.</creatorcontrib><creatorcontrib>Shen, M.</creatorcontrib><creatorcontrib>Hoflijk, I.</creatorcontrib><creatorcontrib>Burk, Y.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Solid state phenomena</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kesters, Els</au><au>Braun, S.</au><au>Holsteyns, Frank</au><au>Le, Quoc Toan</au><au>Conard, T.</au><au>Shen, M.</au><au>Hoflijk, I.</au><au>Burk, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of Etch Residues Generated on Damascene Structures</atitle><jtitle>Solid state phenomena</jtitle><date>2016-09-01</date><risdate>2016</risdate><volume>255</volume><spage>227</spage><epage>231</epage><pages>227-231</pages><issn>1012-0394</issn><issn>1662-9779</issn><eissn>1662-9779</eissn><abstract>For patterned TiN/silicon oxide/low-k dielectric stack, fluorinated etch residues were detected on the TiN surface, the dielectric sidewall and bottom, regardless of the low-k material used in the stack. XPS results showed that they consisted of polymer-based (CFx) residues deposited on trench sidewall and bottom, and metal-based (TiFx) residues mainly deposited on top surface. In terms of post-etch residue removal, the efficiency of various wet clean solutions can be clearly distinguished for CFx, and TiFx using the same patterned porous low-k stack. These results also demonstrate that the removal of both TiFx and CFx residues generated during the plasma is possible in one step with optimized chemical and process.</abstract><cop>Zurich</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/SSP.255.227</doi><tpages>5</tpages></addata></record> |
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| title | Characterization of Etch Residues Generated on Damascene Structures |
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