Strain-Induced Energy Band Gap Opening in Two-Dimensional Bilayered Silicon Film

This work presents a theoretical study of the structural and electronic properties of bilayered silicon film (BiSF) under in-plane biaxial strain/stress using density functional theory (DFT). Atomic structures of the two-dimensional (2-D) silicon films are optimized by using both the local-density a...

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Veröffentlicht in:	Journal of electronic materials 2016-10, Vol.45 (10), p.5040-5047
Hauptverfasser:	Ji, Z., Zhou, R., Lew Yan Voon, L. C., Zhuang, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Band gap Characterization and Evaluation of Materials Chemistry and Materials Science Electronics and Microelectronics Instrumentation Materials Science Multilayered thin films Optical and Electronic Materials Silicones Solid State Physics Stress-strain curves
Online-Zugang:	Volltext
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