Synthesis, energy transfer and luminescence properties of KSrVO^sub 4^:Eu^sup 3+^ red phosphor
KSrVO4:Eu3+ phosphors are synthesized by solid-state reaction method in air. Host KSrVO4 under excitation at 345 nm emits green-yellow light with the CIE chromaticity coordinates (0.3466, 0.4425), and its broad emission band peaking at ~545 nm covers the range 400-750 nm due to 3T1,2 [arrow right] 1...
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description | KSrVO4:Eu3+ phosphors are synthesized by solid-state reaction method in air. Host KSrVO4 under excitation at 345 nm emits green-yellow light with the CIE chromaticity coordinates (0.3466, 0.4425), and its broad emission band peaking at ~545 nm covers the range 400-750 nm due to 3T1,2 [arrow right] 1A1 transitions in [VO4]3- group. KSrVO4:Eu3+ phosphor under excitation at 315 and 394 nm shows red emission with the CIE chromaticity coordinates (0.6279, 0.3717), and the emission spectra in the range of 560-750 nm contains four narrow emission bands owing to 5D0 [arrow right] 7FJ (J = 1, 2, 3, and 4) transitions of Eu3+ ion, respectively. The optimal Eu3+ doping concentration is ~4 mol%. The lifetime decreases from 0.991 to 0.893 ms with increasing Eu3+ concentration within the range 0.5-6 mol%. The possible luminous mechanism is analyzed by the simplified energy level diagrams of VO4 3- group and Eu3+ ion, and energy transfer process in KSrVO4:Eu3+ phosphor. The experimental results indicate that KSrVO4:Eu3+ phosphor will be possible to be used as red phosphor candidate for white light-emitting diode (LED) based on ultraviolet (~315 nm) and near ultraviolet (~395 nm) LED chips. |
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Host KSrVO4 under excitation at 345 nm emits green-yellow light with the CIE chromaticity coordinates (0.3466, 0.4425), and its broad emission band peaking at ~545 nm covers the range 400-750 nm due to 3T1,2 [arrow right] 1A1 transitions in [VO4]3- group. KSrVO4:Eu3+ phosphor under excitation at 315 and 394 nm shows red emission with the CIE chromaticity coordinates (0.6279, 0.3717), and the emission spectra in the range of 560-750 nm contains four narrow emission bands owing to 5D0 [arrow right] 7FJ (J = 1, 2, 3, and 4) transitions of Eu3+ ion, respectively. The optimal Eu3+ doping concentration is ~4 mol%. The lifetime decreases from 0.991 to 0.893 ms with increasing Eu3+ concentration within the range 0.5-6 mol%. The possible luminous mechanism is analyzed by the simplified energy level diagrams of VO4 3- group and Eu3+ ion, and energy transfer process in KSrVO4:Eu3+ phosphor. The experimental results indicate that KSrVO4:Eu3+ phosphor will be possible to be used as red phosphor candidate for white light-emitting diode (LED) based on ultraviolet (~315 nm) and near ultraviolet (~395 nm) LED chips.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-016-4809-6</identifier><language>eng</language><publisher>New York: Springer Nature B.V</publisher><ispartof>Journal of materials science. 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Materials in electronics</title><description>KSrVO4:Eu3+ phosphors are synthesized by solid-state reaction method in air. Host KSrVO4 under excitation at 345 nm emits green-yellow light with the CIE chromaticity coordinates (0.3466, 0.4425), and its broad emission band peaking at ~545 nm covers the range 400-750 nm due to 3T1,2 [arrow right] 1A1 transitions in [VO4]3- group. KSrVO4:Eu3+ phosphor under excitation at 315 and 394 nm shows red emission with the CIE chromaticity coordinates (0.6279, 0.3717), and the emission spectra in the range of 560-750 nm contains four narrow emission bands owing to 5D0 [arrow right] 7FJ (J = 1, 2, 3, and 4) transitions of Eu3+ ion, respectively. The optimal Eu3+ doping concentration is ~4 mol%. The lifetime decreases from 0.991 to 0.893 ms with increasing Eu3+ concentration within the range 0.5-6 mol%. The possible luminous mechanism is analyzed by the simplified energy level diagrams of VO4 3- group and Eu3+ ion, and energy transfer process in KSrVO4:Eu3+ phosphor. The experimental results indicate that KSrVO4:Eu3+ phosphor will be possible to be used as red phosphor candidate for white light-emitting diode (LED) based on ultraviolet (~315 nm) and near ultraviolet (~395 nm) LED chips.</description><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNqNjL1Ow0AQhE8IJEzgAehWooSDvR_bF1oUhERBkQhROTLJmjgKZ7PrK_L2XMEDUIxmPs1olLo2eG8Q6wcxGEqv0VTaB5zr6kQVpqxdJvtxqgqcl7X2pbXn6kJkj4iVd6FQzfIYpx1JL3dAkfjrCBO3UTpiaOMWDum7jyQbihuCkYeReOpJYOjgdcnvb42kT_DN4yLlNIK7bYBpC-NukCy-VGddexC6-vOZunlerJ5edL76SSTTej8kjrlam2CM9bYOzv1v9QtqEkpv</recordid><startdate>20160801</startdate><enddate>20160801</enddate><creator>Cao, Renping</creator><creator>Peng, Dedong</creator><creator>Fu, Ting</creator><creator>Luo, Zhiyang</creator><creator>Zhou, Shenlin</creator><creator>Jiang, Shenhua</creator><creator>Fu, Jingwei</creator><general>Springer Nature B.V</general><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20160801</creationdate><title>Synthesis, energy transfer and luminescence properties of KSrVO^sub 4^:Eu^sup 3+^ red phosphor</title><author>Cao, Renping ; Peng, Dedong ; Fu, Ting ; Luo, Zhiyang ; Zhou, Shenlin ; Jiang, Shenhua ; Fu, Jingwei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_18112427833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cao, Renping</creatorcontrib><creatorcontrib>Peng, Dedong</creatorcontrib><creatorcontrib>Fu, Ting</creatorcontrib><creatorcontrib>Luo, Zhiyang</creatorcontrib><creatorcontrib>Zhou, Shenlin</creatorcontrib><creatorcontrib>Jiang, Shenhua</creatorcontrib><creatorcontrib>Fu, Jingwei</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Database (Proquest)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest advanced technologies & aerospace journals</collection><collection>test</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cao, Renping</au><au>Peng, Dedong</au><au>Fu, Ting</au><au>Luo, Zhiyang</au><au>Zhou, Shenlin</au><au>Jiang, Shenhua</au><au>Fu, Jingwei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis, energy transfer and luminescence properties of KSrVO^sub 4^:Eu^sup 3+^ red phosphor</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><date>2016-08-01</date><risdate>2016</risdate><volume>27</volume><issue>8</issue><spage>8094</spage><pages>8094-</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>KSrVO4:Eu3+ phosphors are synthesized by solid-state reaction method in air. Host KSrVO4 under excitation at 345 nm emits green-yellow light with the CIE chromaticity coordinates (0.3466, 0.4425), and its broad emission band peaking at ~545 nm covers the range 400-750 nm due to 3T1,2 [arrow right] 1A1 transitions in [VO4]3- group. KSrVO4:Eu3+ phosphor under excitation at 315 and 394 nm shows red emission with the CIE chromaticity coordinates (0.6279, 0.3717), and the emission spectra in the range of 560-750 nm contains four narrow emission bands owing to 5D0 [arrow right] 7FJ (J = 1, 2, 3, and 4) transitions of Eu3+ ion, respectively. The optimal Eu3+ doping concentration is ~4 mol%. The lifetime decreases from 0.991 to 0.893 ms with increasing Eu3+ concentration within the range 0.5-6 mol%. The possible luminous mechanism is analyzed by the simplified energy level diagrams of VO4 3- group and Eu3+ ion, and energy transfer process in KSrVO4:Eu3+ phosphor. The experimental results indicate that KSrVO4:Eu3+ phosphor will be possible to be used as red phosphor candidate for white light-emitting diode (LED) based on ultraviolet (~315 nm) and near ultraviolet (~395 nm) LED chips.</abstract><cop>New York</cop><pub>Springer Nature B.V</pub><doi>10.1007/s10854-016-4809-6</doi></addata></record> |
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title | Synthesis, energy transfer and luminescence properties of KSrVO^sub 4^:Eu^sup 3+^ red phosphor |
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