Impact of Random Variations on Cell Stability and Write-Ability of Low-Voltage SRAMs Using Monolayer and Bilayer Transition Metal Dichalcogenide (TMD) MOSFETs

This letter evaluates and analyzes the impacts of random variations on cell stability and write-ability of low-voltage SRAMs using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on ITRS 2028 (5.9 nm) node with the aid of atomistic TCAD mixed-mode simulations. Our study ind...

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Veröffentlicht in:	IEEE electron device letters 2016-07, Vol.37 (7), p.928-931
Hauptverfasser:	Yu, Chang-Hung, Su, Pin, Chuang, Ching-Te
Format:	Artikel
Sprache:	eng
Schlagworte:	bilayer cell stability Circuit stability Correlation Logic gates monolayer SRAM SRAM cells transition metal dichalcogenide (TMD) Variations Wireless sensor networks write-ability
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