Plasma Charging Behavior of p-MOSFETs With Floating Bond Pads and Its Application to Charging-Safe Bond Pad Design

Plasma charging behavior of p-MOSFETs with floating bond pads was studied with experiments and simulations. Experiments show that gate oxide damage can occur in these transistors with a small n-Well during backend integrated-circuit manufacturing process. Simulations confirm that the damage was caus...

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