Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method

The electrical characteristics of the SiC metal-oxide-semiconductor field effect transistor (MOSFET) have been limited by large amount of states at the SiO2/SiC interface. In this study, the accuracy of the energy level of the interface states extracted by hypothetical high frequency extreme, which...

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Veröffentlicht in:	Materials science forum 2016-05, Vol.858, p.437-440
Hauptverfasser:	Watanabe, Hiroshi, Kuroiwa, Takeharu, Noguchi, Munetaka, Iwamatsu, Toshiaki, Amishiro, Hiroyuki, Yamakawa, Satoshi, Nakata, Shuhei
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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