Pragmatic Approach to the Characterization of SiC/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall Measurements

A simple and practical method of characterizing traps at SiC/SiO2 interfaces close to the bottom of the conduction band by using the split C−V and Hall measurements is proposed. This technique was applied to the characterization of traps at a wet-oxidized SiC/SiO2 interface on C-face and those at an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Materials science forum 2016-05, Vol.858, p.477-480
Hauptverfasser:	Hatakeyama, Tetsuo, Takao, Kazuto, Yonezawa, Yoshiyuki, Yano, Hiroshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!