Characterization of Thermally Oxidized SiO2/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)

Wet and N2O oxidized SiO2/SiC for C-face substrates were comprehensively investigated to clarify the origin of oxide defects which affect channel mobility and threshold voltage stability by using leakage-current analysis. The estimated defects are identified by cathode luminescence, X-ray photoelectron spectroscopy, and high-resolution Rutherford backscattering spectroscopy. The origin of the observed oxide defects might be complex defect of O vacancy defects and/or C related defects including N.