Effect of Heat Treatment Under Nitrogen Atmosphere on Sprayed Fluorine Doped In2O3 Thin Films
Fluorine-doped indium oxide thin films (In 2 O 3 :F) were prepared at 500°C for different fluorine concentrations (0 at.%, 2 at.%, 6 at.% and 10 at.%) using the chemical spray pyrolysis technique. Structure and surface morphology of these films were characterized by x-ray diffraction (XRD) and atomi...
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Veröffentlicht in: | Journal of electronic materials 2016-07, Vol.45 (7), p.3251-3258 |
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